A method of manufacturing an article with integral active electronic component includes using an additive manufacturing process to: a) form a non-electrically conductive substrate; b) form a non-electrically conductive perforated layer having an aperture; c) form electrically conductive anode and cathode elements spaced in the aperture; d) deposit a conductive electrical connection to each of the elements suitable for imparting an electrical potential difference between the elements; and e) form a non-electrically conductive sealing layer atop the perforated layer so as to retain and seal the aperture in the perforated layer.

A method of manufacturing an article with integral active electronic component includes using an additive manufacturing process to: a) form a non-electrically conductive substrate; b) form a non-electrically conductive perforated layer having an aperture; c) form electrically conductive anode and cathode elements spaced in the aperture; d) deposit a conductive electrical connection to each of the elements suitable for imparting an electrical potential difference between the elements; and e) form a non-electrically conductive sealing layer atop the perforated layer so as to retain and seal the aperture in the perforated layer.

An integrated vacuum microelectronic structure is described as having a highly doped semiconductor substrate, a first insulating layer placed above said doped semiconductor substrate, a first conductive layer placed above said first insulating layer, a second insulating layer placed above said first conductive layer, a vacuum trench formed within said first and second insulating layers and extending to the highly doped semiconductor substrate, a second conductive layer placed above said vacuum trench and acting as a cathode, a third metal layer placed under said highly doped semiconductor substrate and acting as an anode, said second conductive layer is placed adjacent to the upper edge of said vacuum trench, the first conductive layer is separated from said vacuum trench by portions of said second insulating layer and is in electrical contact with said second conductive layer.

An integrated vacuum microelectronic structure is described as having a highly doped semiconductor substrate, a first insulating layer placed above said doped semiconductor substrate, a first conductive layer placed above said first insulating layer, a second insulating layer placed above said first conductive layer, a vacuum trench formed within said first and second insulating layers and extending to the highly doped semiconductor substrate, a second conductive layer placed above said vacuum trench and acting as a cathode, a third metal layer placed under said highly doped semiconductor substrate and acting as an anode, said second conductive layer is placed adjacent to the upper edge of said vacuum trench, the first conductive layer is separated from said vacuum trench by portions of said second insulating layer and is in electrical contact with said second conductive layer.

A high voltage, high current vacuum integrated circuit includes a common vacuum enclosure that includes at least two cold-cathode field emission electron tubes, and contains at least one internal vacuum pumping means, at least one exhaust tubulation, vacuum-sealed electrically-insulated feedthroughs, and internal electrical insulation. The cold-cathode field emission electron tubes are configured to operate at high voltage and high current and interconnected with each other to implement a circuit function.

A high voltage, high current vacuum integrated circuit includes a common vacuum enclosure that includes at least two cold-cathode field emission electron tubes, and contains at least one internal vacuum pumping means, at least one exhaust tubulation, vacuum-sealed electrically-insulated feedthroughs, and internal electrical insulation. The cold-cathode field emission electron tubes are configured to operate at high voltage and high current and interconnected with each other to implement a circuit function.

Vacuum transistors with carbon nanotube as the collector and/or emitter electrodes are provided. In one aspect, a method for forming a vacuum transistor includes the steps of: covering a substrate with an insulating layer; forming a back gate(s) in the insulating layer; depositing a gate dielectric over the back gate; forming a carbon nanotube layer on the gate dielectric; patterning the carbon nanotube layer to provide first/second portions thereof over first/second sides of the back gate, separated from one another by a gap G, which serve as emitter and collector electrodes; forming a vacuum channel in the gate dielectric; and forming metal contacts to the emitter and collector electrodes. Vacuum transistors are also provided.

The present disclosure may provide a field emission device with an enhanced beam convergence. For this, the device may include a gate structure disposed between a cathode electrode and an anode electrode, wherein the gate structure includes a gate electrode and an atomic layer sheet disposed on the gate electrode, the gate electrode facing an emitter and having at least one aperture formed therein.

Various examples are directed to analog vacuum tube emulator circuits. In various examples, a vacuum tube emulator circuit may comprise a first circuit and a second circuit. The first circuit may be effective to receive, a first voltage, a second voltage, and a third voltage. The first circuit may be effective to develop, at an input of the first circuit, a first current based on the first voltage, the second voltage, and the third voltage. The first circuit may output the first current to an output node. The second circuit may be effective to receive the first voltage, the second voltage, and the third voltage. The second circuit may be effective to develop, at an input of the second circuit, a second current based on the first voltage, the second voltage, and the third voltage. The second circuit may output the second current to the output node.

Various examples are directed to analog vacuum tube emulator circuits. In various examples, a vacuum tube emulator circuit may comprise a first circuit and a second circuit. The first circuit may be effective to receive, a first voltage, a second voltage, and a third voltage. The first circuit may be effective to develop, at an input of the first circuit, a first current based on the first voltage, the second voltage, and the third voltage. The first circuit may output the first current to an output node. The second circuit may be effective to receive the first voltage, the second voltage, and the third voltage. The second circuit may be effective to develop, at an input of the second circuit, a second current based on the first voltage, the second voltage, and the third voltage. The second circuit may output the second current to the output node.