A Hall-effect thruster assembly includes a plurality of magnetic sources for creating a magnetic circuit. The plurality of magnetic sources are positioned between a first end and a second, opposite end of the Hall-effect thruster. The plurality of magnetic sources define a longitudinal axis extending through the first end and the second end. The first end is configured as a discharge end. A mount assembly is coupled to the second end. The mount assembly is configured to secure the plurality of magnetic sources to a spacecraft. A magnetic element is supported by the mount assembly. The magnetic element is positioned relative to the plurality of magnetic sources by the mount assembly.

A crucible that exploits the observation that molten metal tends to flow toward the hottest regions is disclosed. The crucible includes an interior in which dopant material may be disposed. The crucible has a pathway leading from the interior toward an aperture, wherein the temperature is continuously increasing along the pathway. The aperture may be disposed in or near the interior of the arc chamber of an ion source. The liquid metal flows along the pathway toward the arc chamber, where it is vaporized and then ionized. By controlling the flow rate of the pathway, spillage may be reduced. In another embodiment, an inverted crucible is disclosed. The inverted crucible comprises a closed end in communication with the interior of the ion source, so that the closed end is the hottest region of the crucible. An opening is disposed on a different wall to allow vapor to exit the crucible.

A crucible that exploits the observation that molten metal tends to flow toward the hottest regions is disclosed. The crucible includes an interior in which dopant material may be disposed. The crucible has a pathway leading from the interior toward an aperture, wherein the temperature is continuously increasing along the pathway. The aperture may be disposed in or near the interior of the arc chamber of an ion source. The liquid metal flows along the pathway toward the arc chamber, where it is vaporized and then ionized. By controlling the flow rate of the pathway, spillage may be reduced. In another embodiment, an inverted crucible is disclosed. The inverted crucible comprises a closed end in communication with the interior of the ion source, so that the closed end is the hottest region of the crucible. An opening is disposed on a different wall to allow vapor to exit the crucible.

An ion beam generator includes a discharge chamber with a backplate and tubular sidewalk A source of propellant, for example, Xenon gas is provided to the discharge chamber. First and second annular magnets are disposed on or near the backplate, and configured with alternating polarities such that a pair of ring-cusps form on the backplate, without any magnetic ring-cusp formation on the sidewalk A cathode assembly extends into the discharge chamber to provide primary electrons to ionize the propellant.

Plasma processing systems and methods are provided. In one example, a system includes a processing chamber having a workpiece support. The workpiece is configured to support a workpiece. The system includes a plasma source configured to induce a plasma from a process gas in a plasma chamber to generate one or more species of negative ions. The system includes a grid structure configured to accelerate the one or more negative ions towards the workpiece. The grid structure can include a first grid plate, a second grid plate, and one or more magnetic elements positioned between the first grid plate and second grid plate to reduce electrons accelerated through the first grid plate. The system can include a neutralizer cell disposed downstream of the grid structure configured to detach extra electrons from ions of the one or more species of negative ions to generate energetic neutral species for processing the workpiece.

Plasma processing systems and methods are provided. In one example, a system includes a processing chamber having a workpiece support. The workpiece is configured to support a workpiece. The system includes a plasma source configured to induce a plasma from a process gas in a plasma chamber to generate one or more species of negative ions. The system includes a grid structure configured to accelerate the one or more negative ions towards the workpiece. The grid structure can include a first grid plate, a second grid plate, and one or more magnetic elements positioned between the first grid plate and second grid plate to reduce electrons accelerated through the first grid plate. The system can include a neutralizer cell disposed downstream of the grid structure configured to detach extra electrons from ions of the one or more species of negative ions to generate energetic neutral species for processing the workpiece.

An ion throughput pump (ITP) includes a pump inlet configured to communicate with a vacuum chamber; an ionization source fluidly communicating with the vacuum chamber via the pump inlet and configured for ionizing gas species received from the vacuum chamber; a pump outlet; ion optics configured for accelerating ions produced by the ionization source toward the pump outlet; and a roughing pump stage configured for receiving the ions from the ionization source, producing neutral species from the ions, and pumping the neutral species through the pump outlet.

A miniature Hall current plasma source apparatus having magnetic shielding of the walls from ionized plasma, an integrated discharge channel and gas distributor, an instant-start hollow cathode mounted to the plasma source, and an externally mounted keeper, is described. The apparatus offers advantages over existing other Hall current plasma sources having similar power levels, including: lower mass, longer lifetime, lower part count including fewer power supplies, and the ability to be continuously adjustable to lower average power levels using pulsed operation and adjustment of the pulse duty cycle. The Hall current plasma source can provide propulsion for small spacecraft that either do not have sufficient power to accommodate a propulsion system or do not have available volume to incorporate the larger propulsion systems currently available. The present low-power Hall current plasma source can be used to provide energetic ions to assist the deposition of thin films in plasma processing applications.

An ion generation device includes an arc chamber including an internal space and including a front slit for extracting an ion beam from plasma generated in the internal space, a magnetic field generator that generates a magnetic field applied in an axial direction in the internal space, and a first cathode configured to supply a thermoelectron into the internal space. The first cathode includes a first cathode cap, a first heat source, and a first thermal shield including a first extension portion. A first tip portion, and a first tip opening, and a first opening width of the first tip opening in the radial direction is smaller than a maximum width of the first cathode cap in the radial direction.

A linear anode layer ion source is provided that includes a top pole having a linear ion emitting slit. An anode under the top pole has a slit aligned with the top pole ion emitting slit. At least one magnet creates a magnetic field that passes through the anode slit. Wherein the width of the anode slit is 3 mm or less. A process of generating an accelerated ion beam is also provided that includes flowing a gas into proximity to said anode. By energizing a power supply electron flow is induced to the anode and the gas is ionized. Accelerating the ions from the anode through the linear ion emitting slit generates an accelerated ion beam by a process superior to that using a racetrack-shaped slit.