Vacuum electron devices (VEDs) having a plurality of two-dimensional layers of various materials are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together into a sandwich-like structure. The manufacturing process enables incorporation of metallic, magnetic, ceramic materials, and other materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability.

Vacuum electron devices (VEDs) having a plurality of two-dimensional layers of various materials are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together into a sandwich-like structure. The manufacturing process enables incorporation of metallic, magnetic, ceramic materials, and other materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability.

Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control.

Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control.

Some embodiments include a system, comprising: a high voltage enclosure; a cathode disposed in the high voltage enclosure; an anode disposed in the high voltage enclosure; a plurality of grids disposed in the high voltage enclosure between the cathode and the anode; a voltage source configured to generate a common grid voltage; and a voltage divider disposed in the high voltage enclosure, configured to generate a plurality of grid voltages based on the common grid voltage, and configured to apply at least two of the grid voltages to the grids.

Some embodiments include a system, comprising: a high voltage enclosure; a cathode disposed in the high voltage enclosure; an anode disposed in the high voltage enclosure; a plurality of grids disposed in the high voltage enclosure between the cathode and the anode; a voltage source configured to generate a common grid voltage; and a voltage divider disposed in the high voltage enclosure, configured to generate a plurality of grid voltages based on the common grid voltage, and configured to apply at least two of the grid voltages to the grids.

According to some aspects, a cold cathode device is provided, the device comprising a substrate, a field electron emitter disposed upon the substrate and configured to emit electrons in a first direction, and a structure encapsulating the field electron emitter, thereby creating an airtight seal around the field electron emitter, at least a portion of the structure being an atomically thin membrane positioned in the first direction with respect to the field electron emitter. According to some embodiments, at least one einzel lens may be located within the structure and configured to direct electrons emitted by the field electron emitter.

According to some aspects, a cold cathode device is provided, the device comprising a substrate, a field electron emitter disposed upon the substrate and configured to emit electrons in a first direction, and a structure encapsulating the field electron emitter, thereby creating an airtight seal around the field electron emitter, at least a portion of the structure being an atomically thin membrane positioned in the first direction with respect to the field electron emitter. According to some embodiments, at least one einzel lens may be located within the structure and configured to direct electrons emitted by the field electron emitter.

A device for generating a source current of charge carriers by a field emission and a method stabilizing a source current of charge carriers emitted by a field emission element are disclosed. In an embodiment the device includes at least one field emission element from which the charge carriers emerge during operation, which lead to an emission current in the field emission element, at least one extraction electrode in order to extract the charge carriers from the field emission element, wherein a first part of the extracted charge carriers contributes to the source current, and a second part of the extracted charge carriers impinges on the extraction electrode and leads to an extraction current in the extraction electrode, an additional electrode on which the source current of charge carriers impinges at least in part and which contributes to an electrode current in the additional electrode.

A device for generating a source current of charge carriers by a field emission and a method stabilizing a source current of charge carriers emitted by a field emission element are disclosed. In an embodiment the device includes at least one field emission element from which the charge carriers emerge during operation, which lead to an emission current in the field emission element, at least one extraction electrode in order to extract the charge carriers from the field emission element, wherein a first part of the extracted charge carriers contributes to the source current, and a second part of the extracted charge carriers impinges on the extraction electrode and leads to an extraction current in the extraction electrode, an additional electrode on which the source current of charge carriers impinges at least in part and which contributes to an electrode current in the additional electrode.