Disclosed is a field emission apparatus. The apparatus comprises a cathode electrode and an anode electrode spaced apart from each other, an emitter on the cathode electrode, a gate electrode between the cathode and anode electrodes and including at least one gate aperture overlapping the emitter, and an electron transmissive sheet on the gate electrode and including a plurality of fine openings overlapping the gate aperture.

Disclosed is a field emission apparatus. The apparatus comprises a cathode electrode and an anode electrode spaced apart from each other, an emitter on the cathode electrode, a gate electrode between the cathode and anode electrodes and including at least one gate aperture overlapping the emitter, and an electron transmissive sheet on the gate electrode and including a plurality of fine openings overlapping the gate aperture.

An image capture device and an x-ray emitting device are introduced comprising an electron receiving construct and an electron emitting construct separated by a spacer. The electron receiving construct comprises a faceplate, an anode and an inward facing photoconductor. The electron emitting construct comprises: a backplate; a substrate; a cathode; a plurality of field emission type electron sources arranged in an array; a stratified resistive layer between the field emission type electron source and the cathode; a gate electrode; a focus structure and a gate electrode support structure configured to support the gate electrode at a required cathode-gate spacing from the cathode.

An image capture device and an x-ray emitting device are introduced comprising an electron receiving construct and an electron emitting construct separated by a spacer. The electron receiving construct comprises a faceplate, an anode and an inward facing photoconductor. The electron emitting construct comprises: a backplate; a substrate; a cathode; a plurality of field emission type electron sources arranged in an array; a stratified resistive layer between the field emission type electron source and the cathode; a gate electrode; a focus structure and a gate electrode support structure configured to support the gate electrode at a required cathode-gate spacing from the cathode.

Vacuum electron devices (VEDs) having a plurality of two-dimensional layers of various materials are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together into a sandwich-like structure. The manufacturing process enables incorporation of metallic, magnetic, ceramic materials, and other materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability.

Vacuum electron devices (VEDs) having a plurality of two-dimensional layers of various materials are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together into a sandwich-like structure. The manufacturing process enables incorporation of metallic, magnetic, ceramic materials, and other materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability.

According to one embodiment, an X-ray tube includes an anode target, a cathode including a filament and a convergence electrode which includes a groove portion, and an envelope. The groove portion includes a pair of first bottom surfaces which are located in the same plane as the filament and between which the filament is interposed in a width direction of the groove portion, and a pair of second bottom surfaces between which the filament and the pair of first bottom surfaces are interposed in a length direction of the groove portion and which are located closer to an opening of the groove portion than the pair of first bottom surfaces.

In an electron irradiation system, a gas-tight housing encloses a cathode region and an irradiation region, which communicate through at least an aperture. In the cathode region, there is arranged a high-voltage cathode for emitting an electron beam. In the irradiation region, there is an irradiation site arranged to accommodate a stationary or moving object to be irradiated. The migration of cathode-degrading debris is limited by means of an electric field designed to prevent positively charged particles from entering the cathode region via the aperture. The invention can be embodied with an axial electric field, which realizes an energy threshold, or a transversal field which deflects charged particles away from trajectories leading into the cathode region.

In an electron irradiation system, a gas-tight housing encloses a cathode region and an irradiation region, which communicate through at least an aperture. In the cathode region, there is arranged a high-voltage cathode for emitting an electron beam. In the irradiation region, there is an irradiation site arranged to accommodate a stationary or moving object to be irradiated. The migration of cathode-degrading debris is limited by means of an electric field designed to prevent positively charged particles from entering the cathode region via the aperture. The invention can be embodied with an axial electric field, which realizes an energy threshold, or a transversal field which deflects charged particles away from trajectories leading into the cathode region.

Vacuum electron devices (VEDs) having a plurality of two-dimensional layers of various materials are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together into a sandwich-like structure. The manufacturing process enables incorporation of metallic, magnetic, ceramic materials, and other materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability.