A well-logging tool may include a sonde housing and a radiation generator carried by the sonde housing. The radiation generator may include a generator housing, a target carried by the generator housing, a charged particle source carried by the generator housing to direct charged particles at the target, and at least one voltage source coupled to the charged particle source. The at least one voltage source may include a voltage ladder comprising a plurality of voltage multiplication stages coupled in a uni-polar configuration, and at least one loading coil coupled at at least one intermediate position along the voltage ladder. The well-logging tool may further include at least one radiation detector carried by the sonde housing.

A multi charged particle beam writing method includes emitting each corresponding beam in an “on” state while starting and continuing tracking control, shifting a writing position by beam deflection of the multi beams, in addition to tracking control, while continuing tracking control, emitting each corresponding beam in the next “on” state to the next writing position having been shifted while continuing tracking control, and returning the tracking position by resetting tracking control, after emitting each next corresponding beam to the next writing position having been shifted at least once, wherein writing of a predetermined region is completed by repeating the number of preset times a group of performing emitting, shifting, emitting, and returning, wherein the tracking time from start to reset of tracking control in at least one of the repeated groups is longer than the others.

A multi charged particle beam writing method includes emitting each corresponding beam in an “on” state while starting and continuing tracking control, shifting a writing position by beam deflection of the multi beams, in addition to tracking control, while continuing tracking control, emitting each corresponding beam in the next “on” state to the next writing position having been shifted while continuing tracking control, and returning the tracking position by resetting tracking control, after emitting each next corresponding beam to the next writing position having been shifted at least once, wherein writing of a predetermined region is completed by repeating the number of preset times a group of performing emitting, shifting, emitting, and returning, wherein the tracking time from start to reset of tracking control in at least one of the repeated groups is longer than the others.

A method for scanning an object with a charged particle beam, the method may include repeating, for each pair of scan lines out of multiple pairs of scan lines, the stages of: (i) deflecting the charged particle beam along a first direction, thereby scanning the object along a first scan line of the pair of scan lines; (ii) collecting electrons emitted from the object during the scanning of the object along a majority of the first scan line; (iii) deflecting the charged particle beam along a second direction that is normal to the first direction; (iv) deflecting the charged particle beam along a third direction that is opposite to the first direction, thereby scanning the object along a second scan line of the pair of scan lines; (v) collecting electrons emitted from the object during the scanning of the object along a majority of the second scan line; and (vi) deflecting the charged particle beam along the second direction that is normal to the third direction.

There is disclosed an image generation apparatus which is capable of generating a clear image by reducing vibration of the image. The image generation apparatus includes an electron-optics column having an electron gun, a deflector, a condenser lens, and an objective lens, a displacement detector for detecting a displacement of an XY stage, a stage-position measuring device for specifying a position of the XY stage based on an output signal of the displacement detector, an accelerometer for detecting vibration of the electron-optics column, an acceleration-signal processing device for processing an output signal of the accelerometer, and a deflection-controlling device for controlling operation of the deflector. The deflection-controlling device adds a first vibration signal outputted from the acceleration-signal processing device to a second vibration signal outputted from the stage-position measuring device to generate a deflection correcting signal, and causes the deflector to correct the deflection of a charged-particle beam based on the deflection correcting signal.

There is disclosed an image generation apparatus which is capable of generating a clear image by reducing vibration of the image. The image generation apparatus includes an electron-optics column having an electron gun, a deflector, a condenser lens, and an objective lens, a displacement detector for detecting a displacement of an XY stage, a stage-position measuring device for specifying a position of the XY stage based on an output signal of the displacement detector, an accelerometer for detecting vibration of the electron-optics column, an acceleration-signal processing device for processing an output signal of the accelerometer, and a deflection-controlling device for controlling operation of the deflector. The deflection-controlling device adds a first vibration signal outputted from the acceleration-signal processing device to a second vibration signal outputted from the stage-position measuring device to generate a deflection correcting signal, and causes the deflector to correct the deflection of a charged-particle beam based on the deflection correcting signal.

A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.

A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.

An inspection tool includes a controller that is configured to generate a scan pattern for an electron beam to image areas of interest on the wafer. The scan pattern minimizes dwell time of the electron beam on the surface of the wafer between the areas of interest. At least one stage speed and at least one raster pattern can be selected based on the areas of interest. The controller sends instructions to electron beam optics to direct the electron beam at the areas of interest on the surface of the wafer using the scan pattern.

A charged particle beam device includes a lens barrel having a charged particle source, a sample chamber in which a sample to be irradiated with a charged particle beam is provided, and a heat emission type electron source disposed in the sample chamber and maintained at a lower potential than that of an inner wall of the sample chamber, in which the inside of the sample chamber is cleaned by electrons (e−) emitted from the heat emission type electron source after a heating current is generated by applying a voltage from an electron source power supply. The heat emission type electron source is maintained at a lower potential than that of the inner wall of the sample chamber by applying a negative voltage to the heat emission type electron source using a bias power supply. A magnitude of the negative voltage applied to the heat emission type electron source is preferably about 30 to 1000 V, particularly preferably about 60 to 120 V.