The invention relates to a particle beam device (100) for imaging, analyzing and/or processing an object (114). The particle beam device (100) comprises a first particle beam generator (300) for generating a first particle beam, wherein the first particle beam generator (300) has a first generator beam axis (301), wherein an optical axis (OA) of the particle beam device (100) and the first generator beam axis (301) are identical; a second particle beam generator (400) for generating a second particle beam, wherein the second particle beam generator (400) has a second generator beam axis (401), wherein the optical axis (OA) and the second generator beam axis (401) are arranged at an angle being different from 0° and 180°; a deflection unit (500) for deflecting the second particle beam from the second generator beam axis (401) to the optical axis (OA) and along the optical axis (OA), wherein the deflection unit (500) has a first opening (501) and a second opening (502) being different from the first opening (501), wherein the optical axis (OA) runs through the first opening (501), wherein the second generator beam axis (401) runs through the second opening (502); an objective lens (107) for focusing the first particle beam or the second particle beam onto the object (114), wherein the optical axis (OA) runs through the objective lens (107); and at least one detector (116, 121, 122) for detecting interaction particles and/or interaction radiation.

A system includes an ion source configured to generate ions having a first polarity, one or more extraction electrodes configured to extract the ions from the ion source as an ion beam having an extraction energy, a mass resolving slit or aperture configured to select a desired isotope from the ion beam such that a desired isotopic ion beam passes through the mass resolving slit or aperture, a target positioned relative to the mass resolving slit or aperture so that the desired isotopic ion beam is incident on the target, and a voltage source coupled to the target and configured to hold the target at a first voltage having the first polarity. The first voltage causes a reduction of the extraction energy as the desired isotopic ion beam approaches the target to minimize sputtering and maximize collection of the ions on the target to reconstitute an ionized material.

A system includes an ion source configured to generate ions having a first polarity, one or more extraction electrodes configured to extract the ions from the ion source as an ion beam having an extraction energy, a mass resolving slit or aperture configured to select a desired isotope from the ion beam such that a desired isotopic ion beam passes through the mass resolving slit or aperture, a target positioned relative to the mass resolving slit or aperture so that the desired isotopic ion beam is incident on the target, and a voltage source coupled to the target and configured to hold the target at a first voltage having the first polarity. The first voltage causes a reduction of the extraction energy as the desired isotopic ion beam approaches the target to minimize sputtering and maximize collection of the ions on the target to reconstitute an ionized material.

A method for processing a substrate that includes: applying, at an ionizer, a drive pulse train to an ion source to ionize a gas cluster beam and transfer the drive pulse train to the gas cluster beam; measuring, at a detector exposed to the gas cluster beam, a beam current synchronously with the drive pulse train; obtaining time-of-flight information of the clusters and the monomers in the gas cluster beam based on the beam current and the drive pulse train; determining size information relating to a size distribution of clusters and monomers in the gas cluster ion beam based on the time-of-flight information; adjusting a process parameter of the gas cluster beam based on the size information; and exposing the substrate to the gas cluster beam with the adjusted process parameter.

A system and method for extending the life of a cathode and repeller in an IHC ion source is disclosed. The system monitors the health of the cathode by operating using a known set of parameters and measuring the bias power used to generate the desired extracted beam current or the desired current from the arc voltage power supply. Based on the measured bias power, the system may determine whether the cathode is becoming too thin, and may take a corrective action. This corrective action may be to alert the operator; to operate the IHC ion source using a predetermined set of parameters; or to change the dilution used within the IHC source. By performing these actions, the life of the cathode may be more than doubled.

A system and method for extending the life of a cathode and repeller in an IHC ion source is disclosed. The system monitors the health of the cathode by operating using a known set of parameters and measuring the bias power used to generate the desired extracted beam current or the desired current from the arc voltage power supply. Based on the measured bias power, the system may determine whether the cathode is becoming too thin, and may take a corrective action. This corrective action may be to alert the operator; to operate the IHC ion source using a predetermined set of parameters; or to change the dilution used within the IHC source. By performing these actions, the life of the cathode may be more than doubled.

A treatment system and process includes a ribbon beam ion source that is configured to implant ions into a product to modify a portion of the product; multiple means of controlling the temperature of the product; the means including radiative conduction, gas conduction to a heatsink by means of a gas cushion, adjustment of the ion beam density at the product, adjustment of the ion beam intensity at the product and ion beam acceleration parameters, and adjustment of the ion dose to the product b; and a product movement system configured to move the product through the treatment system past the ribbon beam ion source. The treatment system further includes a system controller configured to control at least one the following: the gas cushion system, the ribbon beam ion source, the temperature control system, the heatsink, and the product movement system.

A treatment system and process includes a ribbon beam ion source that is configured to implant ions into a product to modify a portion of the product; multiple means of controlling the temperature of the product; the means including radiative conduction, gas conduction to a heatsink by means of a gas cushion, adjustment of the ion beam density at the product, adjustment of the ion beam intensity at the product and ion beam acceleration parameters, and adjustment of the ion dose to the product b; and a product movement system configured to move the product through the treatment system past the ribbon beam ion source. The treatment system further includes a system controller configured to control at least one the following: the gas cushion system, the ribbon beam ion source, the temperature control system, the heatsink, and the product movement system.

An ion beam generator includes an emission electrode, an extraction electrode, and an electricity generator. The emission electrode includes a substrate and a plurality of nanowires extending away from the substrate, substantially towards the extraction electrode, the nanowires having a length of 50 nm to 50 μm. The emission electrode has a source of ions including a sheet of ionic liquid formed on the substrate and at least partially immersing the nanowires. The nanowires and the substrate are electrically insulating or semiconducting, and the electricity generator is connected to the sheet of ionic liquid. The emission electrode is thus capable of sending ion beams from the ionic liquid to the extraction electrode.

An ion beam generator includes an emission electrode, an extraction electrode, and an electricity generator. The emission electrode includes a substrate and a plurality of nanowires extending away from the substrate, substantially towards the extraction electrode, the nanowires having a length of 50 nm to 50 μm. The emission electrode has a source of ions including a sheet of ionic liquid formed on the substrate and at least partially immersing the nanowires. The nanowires and the substrate are electrically insulating or semiconducting, and the electricity generator is connected to the sheet of ionic liquid. The emission electrode is thus capable of sending ion beams from the ionic liquid to the extraction electrode.