A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

A scanning electron microscope (SEM) includes an electron gun, a deflector, an objective lens, first and second detectors each configured to detect emission electrons emitted from the wafer based on the input electron beam being irradiated on the wafer, a first energy filter configured to block electrons having energy less than a first energy among emission electrons emitted from a wafer based on an input electron beam from being detected by the first detector, and a second energy filter configured to block electrons having energy less than second energy among the emission electrons from being detected by the second detector.

A system is provided for in-situ ion beam etch rate or deposition rate measurement, including: a vacuum chamber; an ion beam source configured to direct an ion beam onto a first surface of a sample located within the vacuum chamber and to etch the first surface of the sample with an etch rate; or a material source configured to deposit material onto a first surface of a sample located within the vacuum chamber with a deposition rate; and an interferometric measurement device located at least partially within the vacuum chamber and configured to direct light onto a second surface of the sample and to determine the etch rate of the ion beam or the deposition rate of the deposited material in-situ based on light reflected from the sample.

An interference scanning transmission electron microscope includes an electron source configured to emit an electron beam, a lens configured to irradiate a sample with a converged electron beam, an electron beam bi-prism configured to divide an electron wave through the sample and to superimpose a first electron wave and a second electron wave divided to form an interference fringe, a camera which is a detector configured to detect the interference fringe, and a computer configured to calculate a phase difference between the first electron wave and the second electron wave based on the interference fringe, wherein the electron beam bi-prism is provided between the sample and the detector.

A surface processing apparatus is an apparatus which performs surface processing on an inspection object 20 by irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source 10 (including lens system that controls beam shape of electron beam) which generates an electron beam; a stage 30 on which an inspection object 20 to be irradiated with the electron beam is set; and an optical microscope 110 for checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection object 20 is set at 10 nA to 100 A.

Apparatuses for collection of upstream and downstream transmission electron microscopy (TEM) cathodoluminescence (CL) emitted from a sample exposed to an electron beam are described. A first fiber optic cable carries first CL light emitted from a first TEM sample surface, into a spectrograph. A second fiber optic cable carries second CL light emitted from a second TEM sample surface into the spectrograph. The first and second fiber optic cables are positioned such that the spectrograph produces a first light spectrum for the first fiber optic cable and a separate light spectrum for the second fiber optic cable. The described embodiments allow collection of TEM CL data in a manner that allows analyzing upstream and downstream TEM CL signals separately and simultaneously with an imaging spectrograph.

An optical system used in a charged particle beam inspection system. The optical system includes one or more optical lenses, and a compensation lens configured to compensate a drift of a focal length of a combination of the one or more optical lenses from a first medium to a second medium.

A sample holding device for studying light-driven reactions and a sample analysis method using the same are disclosed. The sample holding device comprises a main body, a supporting structure and a light source assembly. The main body has a channel which has a first end and a second end opposite to the first end, and a focusing lens which is located on the second end. The supporting structure is located on one end of the main body for sample supporting. The light source assembly is detachably disposed on the other end opposite to the end which is disposed with the supporting structure. The light source assembly emits a light beam into the first end of the channel. The light beam then irradiates the sample which locates on the supporting structure after passing through the focusing lens.

Provided is a charged particle beam device capable of observing the interior and the surface of a sample in a simple manner. This charged particle beam device operates in a transmitted charged particle image mode and a secondary charged particle image mode. In the transmitted charged particle image mode, a transmitted charged particle image is produced on the basis of a detection signal (512) associated with light emitted from a light-emitting member (500) that emits light upon being irradiated with transmitted charged particles transmitted through the interior of a sample (6). In the secondary charged particle image mode, a secondary charged particle image is produced on the basis of a detection signal (518) caused by reflected charged particles or secondary charged particles (517) from the sample (6).

An electron beam device obtains contrast reflecting an electronic state of a sample with high sensitivity. The device includes an electron optical system which emits an electron beam to a sample and detects electrons emitted from the sample; a light pulse emission system that emits a light pulse to the sample; a synchronization processing unit that samples the emitted electrons; an image signal processing unit which forms an image by a detection signal output based upon the emitted electrons detected by the electron optical system; and a device control unit for setting a control condition of the electron optical system. The device control unit sets a sampling frequency for detection sampling of the emitted electrons to be greater than a value obtained by dividing the number of emissions of the light pulse per unit pixel time by the unit pixel time.