Electron gun systems with a particular inner width dimension, sweep electrodes, or a combination of a particular inner width dimension and sweep electrodes are disclosed. The inner width dimension may be less than twice a value of a Larmor radius of secondary electrons in a channel downstream of a beam limiting aperture, and a Larmor time for the secondary electrons may be greater than 1 ns. The sweep electrode can generates an electric field in a drift region, which can increase kinetic energy of secondary electrons in the channel.

A apparatus may include a power supply to receive a first voltage potential and output a second voltage potential that is greater than the first voltage potential and a cathode emitter to emit ions in response to application of the second voltage potential. The apparatus may also include a step down transformer to receive the second voltage potential and output a third voltage potential that is less than the second voltage potential. The apparatus may also include a heating element to, in response to application of the third voltage potential, heat the cathode emitter and lower a work function of the cathode emitter.

An RC IGBT includes an active region with an IGBT section and a diode section. In a plurality of control trenches of the RC IGBT, there are a plurality of IGBT control electrodes and, electrically isolated from the IGBT control electrodes, a plurality of plasma control electrodes, each of the IGBT control electrodes and plasma control electrodes being electrically isolated from both load terminals of the RC IGBT. The IGBT section includes both a first subset of the IGBT control electrodes and a first subset of the plasma control electrodes. The diode section includes a second subset of the plasma control electrodes.

The invention provides a power supply device and a charged particle beam device capable of reducing noise generated between a plurality of voltages. The charged particle beam device includes a charged particle gun configured to emit a charged particle beam, a stage on which a sample is to be placed, and a power supply circuit configured to generate a first voltage and a second voltage that determine energy of the charged particle beam and supply the first voltage to the charged particle gun. The power supply circuit includes a first booster circuit configured to generate the first voltage, a second booster circuit configured to generate the second voltage, and a switching control circuit configured to perform switching control of the first booster circuit and the second booster circuit using common switch signals.

A discharge control apparatus for controlling a flyback power supply circuit which includes a transformer having a primary coil and a secondary coil and performing voltage conversion, and a driver for controlling energization of the primary coil. The power supply circuit supplies electric energy to a plasma reactor. The discharge control apparatus calculates, based on primary current flowing through the primary coil and primary voltage generated in the primary coil, supply energy supplied to the primary coil and regeneration energy which is a portion of the supply energy not used for the discharge in the plasma reactor. The discharge control apparatus controls the power supply circuit based on the calculated supply energy and the calculated regeneration energy. Also disclosed is a method for controlling the flyback power supply circuit.

Some embodiments include a pulsing power supply comprising a power supply and a transformer comprising: a transformer core; a primary winding wrapped around a portion of the transformer core, the primary winding having a first lead and a second lead; and a secondary winding wrapped around a portion of the transformer core. The pulsing power supply may also include a first switch electrically connected with the first lead of the primary winding and the power supply; and a second switch electrically connected with the second lead of the primary winding and the power supply, wherein the first switch and the second switch are opened and closed at different time intervals. The pulsing power supply may also include a pulsing output electrically coupled with the secondary winding of the transformer that outputs pulses having a voltage greater than about 2 kV and with pulse frequencies greater than 1 kHz.

A method, and a high voltage (HV) system that may include a noise reduction unit (MNRU) and a bias setting unit (BSU). The HV system may receive a HV supply signal, over a high voltage supply line from a HV supply unit. The HV supply unit, the MNRU, the BSU and a HV charged particle system may share a ground. At least the MNRU may detect noise in the HV supply signal and send, though the ground, a noise compensation signal. The BSU may receive an indication about a requested value of a bias voltage, and apply the bias voltage to a noise compensated HV signal to provide a biased and noise compensated HV signal to the HV charged particle system.

A plasma polymerization apparatus is provided for forming a polymerization coating on an inner surface of an object. The plasma polymerization apparatus comprises a chamber, a gas supply, a monomer source, a first electrode, a second electrode, a power source, and a metal foil. The gas supply is connected to the chamber for filling the chamber with a working gas. The monomer source is connected to the chamber for providing a vaporized monomer material into the chamber. The first electrode is located at a first side of the chamber. The second electrode is located at a second side of the chamber. The power source is electrically connected to the first electrode and the second electrode for generating plasma. The metal foil is wrapped around an outer surface of the object and placed between the first electrode and the second electrode. A plasma polymerization method is also provided.

A plasma polymerization apparatus is provided for forming a polymerization coating on an inner surface of an object. The plasma polymerization apparatus comprises a chamber, a gas supply, a monomer source, a first electrode, a second electrode, a power source, and a metal foil. The gas supply is connected to the chamber for filling the chamber with a working gas. The monomer source is connected to the chamber for providing a vaporized monomer material into the chamber. The first electrode is located at a first side of the chamber. The second electrode is located at a second side of the chamber. The power source is electrically connected to the first electrode and the second electrode for generating plasma. The metal foil is wrapped around an outer surface of the object and placed between the first electrode and the second electrode. A plasma polymerization method is also provided.

Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.