Two types of operational parameters are used in a particle beam microscope. First parameters influence the image quality, and have settings that are alterable by a user in view of obtaining a better image quality. Second parameters characterize the mode of operation, and the image quality becomes poorer when these change. A mode of operation of the particle beam microscope includes: registering of settings of the first parameters and the second parameters, which the user undertakes in a period of time; analysing a plurality of recorded settings of the first parameters and of the second parameters; determining settings of the first parameters which are advantageous in view of the image quality on the basis of the current settings of the second parameters; and setting the determined advantageous settings of the first parameters.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

The present application relates to an apparatus for determining a position of at least one element on a photolithographic mask, said apparatus comprising: (a) at least one scanning particle microscope comprising a first reference object, wherein the first reference object is disposed on the scanning particle microscope in such a way that the scanning particle microscope can be used to determine a relative position of the at least one element on the photolithographic mask relative to the first reference object; and (b) at least one distance measuring device, which is embodied to determine a distance between the first reference object and a second reference object, wherein there is a relationship between the second reference object and the photolithographic mask.

The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.

Disclosed are semiconductor inspection apparatuses and methods. The semiconductor inspection apparatus comprises a stage that supports a semiconductor device, a first column that irradiates a first electron beam toward the semiconductor device on the stage, a second column that irradiates a second electron beam toward the semiconductor device, and a detector that detects a secondary electron generated by the second electron beam. The first column is disposed to make a first angle with a top surface of the semiconductor device. The second column is disposed to make a second angle with the top surface of the semiconductor device. The first angle and the second angle are different from each other.

A system for collection information from a sample includes a scan generator having a first communication channel and a second communication channel. The first communication channel provides data communication between the scan generator and one or more sampling location movement devices. The second communication channel provides data communication with one or more signal detectors.

Techniques for acquiring an electron energy loss spectrum in two dimensions are disclosed herein. The technique at least includes exposing an electron sensor to an electron spectrum projected in two dimensions, wherein one of the two dimensions corresponds to a dispersive axis, and the other of the two dimensions corresponds to a non-dispersive axis, receiving an electron sensor readout frame from the electron sensor, where the electron sensor readout frame comprises a plurality of values representative of the electron spectrum in each of the two dimensions, and reducing a resolution of the electron sensor readout frame in at least one of the two dimensions, where reducing the resolution includes reducing the number of values in the at least one of the two dimensions, where the electron sensor readout frame comprises a plurality of values in each of the two dimensions after the reduction in resolution.

Generating an image of an object and/or a representation of data about the object uses a particle beam apparatus. The particle beam apparatus comprises at least one control unit for setting a guide unit by selecting a value of a control parameter of the control unit. A functional relationship is determined between a first control parameter value and a second control parameter value depending on the predeterminable range of a landing energy of the particles. A desired value of the landing energy is set. The value of the control parameter corresponding to the desired value of the landing energy is selected on the basis of the determined functional relationship and the guide unit is controlled using the value of the control parameter corresponding to the desired value of the landing energy.

To shorten a time required for evaluation of a recipe while suppressing an increase in a data amount. A charged particle beam device includes a microscope that scans a charged particle beam on a sample, detects secondary particles emitted from the sample, and outputs a detection signal and a computer system that generates a frame image based on the detection signal and processes an image based on the frame images. The computer system calculates a moment image between a plurality of the frame images, and calculates a feature amount data of the frame image based on a moment.

Aspects of the present disclosure provide an apparatus comprising a primary beam column configured to direct a primary beam of energetic particles onto a location of interest on a sample containing one or more integrated circuit structures, a detector configured to produce a signal in response to detection of secondary charged particles generated as a result of an interaction between the primary beam of energetic particles and the location of interest, and a signal processor coupled to the detector configured to measure the transient behavior of generation of the secondary charged particles from the signal produced by the detector, and a characterizing module configured to characterize the location of interest by comparing the measured transient behavior to a predetermined reference transient behavior. The detector has a response that is fast enough to detect a transient behavior of generation of the secondary charged particles.