The present invention relates to an automatic sequence for repeatedly performing SEM observation and FIB processing by using a low acceleration voltage for a long time. In order to realize very accurate three-dimensional structure/composition analysis, in the automatic sequence for repeatedly performing sample observation using a scanning electron microscope using a CFE electron source and sample processing using a FIB device, low temperature flushing using the CFE electron source is performed at predetermined timing except for a SEM observation time. According to the present invention, the automatic sequence for repeatedly performing the sample observation using the scanning electron microscope using the CFE electron source and the sample processing using the FIB device can be performed for a long time. Therefore, it is possible to acquire a SEM image which achieves high resolution and improved current stability while the low acceleration voltage is used.

There is provided an electron microscope in which a crossover position can be kept constant. The electron microscope (100) includes: an electron source (110) for emitting an electron beam; an acceleration tube (170) having acceleration electrodes (170a-170f) and operative to accelerate the electron beam; a first electrode (160) operative such that a lens action is produced between this first electrode (160) and the initial stage of acceleration electrode (170a); an accelerating voltage supply (112) for supplying an accelerating voltage to the acceleration tube (170); a first electrode voltage supply (162) for supplying a voltage to the first electrode (160); and a controller (109b) for controlling the first electrode voltage supply (162). The lens action produced between the first electrode (160) and the initial stage of acceleration electrode (170a) forms a crossover (CO2) of the electron beam. The controller (109b) controls the first electrode voltage supply (162) such that, if the accelerating voltage is modified, the ratio between the voltage applied to the first electrode (160) and the voltage applied to the initial stage of acceleration electrode (170a) is kept constant.

A cold trap is provided to reduce contamination gases that react with the beam during operations that use a process gas. The cold trap is set to a temperature that condenses the contamination gas but does not condense the process gas. Cold traps may be used in the sample chamber and in the gas line.

Disclosed embodiments apply electron beams to substrates for microelectronic workpieces to improve plasma etch and deposition processes. The electron beams are generated and directed to substrate surfaces using DC (direct current) biasing, RF (radio frequency) plasma sources, and/or other electron beam generation and control techniques. For certain embodiments, DC-biased RF plasma sources, such as DC superposition (DCS) or hybrid DC-RF sources, are used to provide controllable electron beams on surfaces opposite a DC-biased electrode. For certain further embodiments, the DC-biased electrode is pulsed. Further, electron beams can also be generated through electron beam extraction from external and/or non-ambipolar sources. The disclosed techniques can also be used with additional electron beam sources and/or additional etch or deposition processes.

The present application relates to an apparatus for processing a photolithographic mask, said apparatus comprising: (a) at least one time-varying particle beam, which is embodied for a local deposition reaction and/or a local etching reaction on the photolithographic mask; (b) at least one first means for providing at least one precursor gas, wherein the precursor gas is embodied to interact with the particle beam during the local deposition reaction and/or the local etching reaction; and (c) at least one second means, which reduces a mean angle of incidence (φ) between the time-varying particle beam and a surface of the photolithographic mask.

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step.

A magnetic inductor for heating parts by means of induction having a geometry with a density greater than or equal to 99.9% (absence of pores), produced by a plurality of welded layers formed by metal dust particles of a conductive, non-magnetic material (such as, inter alia, copper, tin, aluminium, gold, or silver), preferably copper or a copper-based alloy, having a spherical shape and a grain size between 40 and 100 μm, and in a single-piece part including electrical and mechanical connections. Also, a method for producing the magnetic inductor with EBM technology (electron beam melting/production technology based on electron beam fusion), using a system comprising an electron gun, a vacuum chamber, a working chamber and a manipulation system.

Disclosed herein is a method for cross-section processing and observation, and apparatus therefore, the method including: performing a position information obtaining process of observing the entirety of a sample by using an optical microscope or an electron microscope, and of obtaining three-dimensional position coordinate information of a particular observation target object included in the sample; performing a cross-section processing process of irradiating a particular region in which the object is present by using a focused ion beam based on the information, and of exposing a cross section of the region; performing a cross-section image obtaining process of irradiating the cross section by using an electron beam, and of obtaining a cross-section image of a predetermined size region including the object; and performing a three-dimensional image obtaining process of repeating the cross-section processing process and the cross-section image obtaining process at predetermined intervals in a predetermined direction, and of obtaining a three-dimensional image from obtained multiple cross-section images.

The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.