A carbon film forming method, that introduces a raw material gas including carbon into a film forming chamber, ionizes the gas by using an ion source, accelerates the ionized gas, and radiates the ionized gas to a surface of a substrate to form a carbon film on the surface of the substrate, includes forming the carbon film while rotating a first magnet, which is provided on the opposite side of the substrate across a region in which the raw material gas is ionized so as to be eccentric and/or inclined with respect to a central axis connecting the center of the ion source and a position corresponding to the center of the substrate held by the holder, in a circumferential direction.

An apparatus for the vacuum treatment of substrates in a vacuum chamber includes a substrate support device with a pylon which can be rotated about a longitudinal axis and has holding means for substrates and a plasma discharge device assigned to the pylon. The plasma discharge device includes more than two plate-shaped electrodes having excitation areas, the excitation areas of which are all oriented in the direction of the pylon and a power supply device for the excitation of a plasma discharge, by at least one electrical voltage applied to at least two of the electrodes, is provided, the excited plasma acting at least on parts of the pylon and on substrates that can be arranged on them. A process performs the vacuum coating by the apparatus.

A method of manufacturing an upper electrode of a plasma processing device includes forming a covering layer having plasma resistance on a surface of a main body portion constituting the upper electrode at a side of the processing space; polishing a surface of the covering layer exposed to the processing space; and after the polishing, blasting the surface of the covering layer polished at the polishing.

A glow discharge spectrometry system includes a glow discharge lamp suitable for receiving a solid sample (10) and forming a glow discharge etching plasma (19). The system (100) for measuring in situ the depth of the erosion crater generated by etching of the sample (10) includes an optical separator (3), optical elements (4) suitable for directing a first incident beam (21) toward a first zone (11) of the sample, the first zone being exposed to the etching plasma, and a second incident beam (22) toward a second zone (12) of the same side of the sample, the second zone being protected from the etching plasma, respectively, and an optical recombining device (3) suitable for forming an interferometric beam (30) so as to determine the depth (d) of the erosion crater.

A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. A high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber, a first dielectric member is provided at the cylindrical shaped chamber's sidewall facing the movable electrode, and an overlap area between the first dielectric member and a side surface of the movable electrode is changed according to movement of the movable electrode.

Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.

The present invention discloses methods for producing a hydrophilic coating for chemically inert substrates such as fluoropolymers using a multi-step coating process consisting of (1) producing a plasma polymerization coating of alcohol compounds on the substrate, followed by (2) sequentially contacting the plasma polymer coated substrate with one or more solutions of hydrophilic polymers. Advantageously, such methods produce a strongly adhered hydrophilic coating for fluoropolymer and other chemically inert substrates.

A method of treating particles by disaggregating, deagglomerating, exfoliating, cleaning, functionalising, doping, decorating and/or repairing said particles, in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles.

Disclosed is a display device, including a first substrate having flexibility including a pixel region and a frame region around the pixel region, a pixel arranged on a first surface of the first substrate in the pixel region, and a terminal section arranged in the frame region and connected to the pixel, in which the first substrate includes an adjustment region between the pixel and the terminal section, the adjustment region having a different Young's modulus from those of the pixel region and the frame region.

After CMP and before an epitaxial growth step, the substrate is prepared by an atmospheric plasma which includes not only a reducing chemistry, but also metastable states of a chemically inert carrier gas. This removes residues, oxides, and/or contaminants. Optionally, nitrogen passivation is also performed under atmospheric conditions, to passivate the substrate surface for later epitaxial growth.