Disclosed is a plasma device including at least two plasma cells, and a command unit, wherein the first and the second electrodes of a given plasma cell are independent from the corresponding first and second electrodes of the contiguous plasma cells. The electrodes of contiguous plasma cells are independently connected to the command unit. The command unit includes a high voltage generator and a radiofrequency generator which are mutually protected by a filtering element.

A plasma generator includes an outer electrode that encloses a first inner electrode and a second inner electrode. The first inner electrode includes a plurality of protrusions that extend towards the outer electrode. A voltage signal can be applied across the outer electrode and the first inner electrode to excite gas injected into gaps between the protrusions and the outer electrode. Plasma is generated surrounding the protrusions. The second inner electrode is at a downstream location of the excited gas relative to the first inner electrode. The second inner electrode forms a second gap with the outer electrode. A voltage signal can be applied across the second inner electrode and the outer electrode, further exciting the gas to generate second plasma at the second gap. The second plasma is spread evenly across the second inner electrode and the outer electrode.

A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.

Described herein are plasma generation devices and methods of use of the devices. The devices can be used for the cleaning of various surfaces and/or for inhibiting or preventing the accumulation of particulates, such as dust, or moisture on various surfaces. The devices can be used to remove dust and other particulate contaminants from solar panels and windows, or to avoid or minimize condensation on various surfaces. In an embodiment a plasma generation device is provided. The plasma generation device can comprise: a pair of electrodes positioned in association with a surface of a dielectric substrate. The pair of electrodes can comprise a first electrode and a second electrode. The first electrode and second electrode can be of different sizes, one of the electrodes being smaller than the other of the electrodes. The first electrode and second electrode can be separated by a distance and electrically connected to a voltage source.

A plasma generator includes an outer electrode that encloses a first inner electrode and a second inner electrode. The first inner electrodes includes a plurality of protrusions that extend towards the outer electrode. A voltage signal can be applied across the outer electrode and the first inner electrode to excite gas injected into gaps between the protrusions and the outer electrode. Plasma is generated surrounding the protrusions. The second inner electrode is at a downstream location of the excited gas relative to the first inner electrode. The second inner electrode forms a second gap with the outer electrode. A voltage signal can be applied across the second inner electrode and the outer electrode, further exciting the gas to generate second plasma at the second gap. The second plasma is spread evenly across the second inner electrode and the outer electrode.

A corona/plasma treatment machine includes an array of electrodes arranged in a helix along a conductive central cylinder, allowing for the efficient surface treatment of materials with greater cross-sectional heights and widths than what is conventionally possible. The corona/plasma treatment machine further includes of a high frequency, high voltage power source, a dielectric, and a contact plate. The array of electrodes is driven using a motor and rotates about its longitudinal axis and is electrically isolated from its surroundings. When power is supplied to the electrode array, electrical energy is discharged from the tips of the electrodes near the contact plate and creates a plasma corona aura formed from the ionization of the surrounding air between the electrode array and the contact plate. A conveyor is positioned below the electrode array and configured to feed material through the plasma corona aura.

A discharge electrode E in an electrode chamber C is formed of a pair of electrode members 8 and 9 having lengths equal to or greater than a width of a film F. Also, the pair of electrode members 8 and 9 are disposed facing each other so as to sandwich a support member 4 there-between, which has nearly the same length as to electrode members; a gap is formed in a section in which the pair of electrode members 8 and 9 face each other; and this gap is open at a tip of the discharge electrode so as to serve as a gas pathway 15. Meanwhile, in the aforementioned support member 4, a plurality of gas guiding holes 5 are formed in a longitudinal direction thereof, and the gas guiding holes are in communication with a gas supplying system.

A method of evaluating metal contamination by measuring the amount of metal contaminants to a silicon wafer in a rapid thermal processing apparatus includes steps of obtaining a Si single crystal grown by the Czochralski method at a pulling rate of 1.0 mm/min or lower, the crystal having oxygen concentration of 1.310.sup.18 atoms/cm.sup.3 or less, slicing silicon wafers from the Si single crystal except regions of 40 mm toward the central portion from the head of the single crystal and 40 mm toward the central portion from the tail, heat-treating the silicon wafer with a rapid thermal processing apparatus and transferring contaminants from members in a furnace of the rapid thermal processing apparatus to the silicon wafer, and measuring a lifetime of the silicon wafer to which contaminants are transferred.

A discharge electrode E in an electrode chamber C is formed of a pair of electrode members 8 and 9 having lengths equal to or greater than a width of a film F. Also, the pair of electrode members 8 and 9 are disposed facing each other so as to sandwich a support member 4 there-between, which has nearly the same length as to electrode members; a gap is formed in a section in which the pair of electrode members 8 and 9 face each other; and this gap is open at a tip of the discharge electrode so as to serve as a gas pathway 15. Meanwhile, in the aforementioned support member 4, a plurality of gas guiding holes 5 are formed in a longitudinal direction thereof, and the gas guiding holes are in communication with a gas supplying system.

A discharge electrode E in an electrode chamber C comprises a plurality of electrode members 8, 9. The electrode members 8, 9 are disposed facing each other by having a supporting member 4 therebetween, a gap is formed between the facing portions of the electrode members 8, 9, and by having the gap as a gas passageway 15, the gas passageway is opened in the leading end of the discharge electrode. A replacement gas having been supplied from a manifold pipe 3 is supplied to the gas passageway 15 via an orifice.