Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.

Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.

A method for producing a bonded plate-shaped assembly includes retaining a pair of plate-shaped members facing each other by a pair of retaining base members; charging a photo-curable liquid material between the pair of plate-shaped members facing each other; causing movement of the pair of retaining base members by a retaining base member movement unit to cause the pair of plate-shaped members to draw close to each other to cause wetting spreading of the liquid material between the pair of plate-shaped members; detecting a wetting spreading state of the liquid material by a sensor; and illuminating curing light, in response to the result of detection, to the liquid material wettingly spread to the entire surfaces of the pair of plate-shaped members, to form the bonded plate-shaped assembly made up of the pair of plate-shaped members bonded together.

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved alignment mechanism is disclosed. An improved charged particle beam inspection apparatus may include a second electron detection device to generate one or more images of one or more beam spots of the plurality of secondary electron beams during the alignment mode. The beam spot image may be used to determine the alignment characteristics of one or more of the plurality of secondary electron beams and adjust a configuration of a secondary electron projection system.

An apparatus for removing paint from a metallic component. The apparatus includes an electrolytic cell in which the metallic component is an anode, and a DC power supply capable of producing a plasma causing the paint from the metallic component to disintegrate. A method of depainting a metallic component includes providing an electrolytic cell with the metallic component to be depainted acting as an anode. A DC power supply connected to the cathode and anode is activated to produce a plasma causing the paint from the metallic component to disintegrate. Another method of method of depainting a metallic component includes providing an aqueous solution of sodium hydrogen carbonate, sodium citrate, and potassium oxalate as an electrolyte, a cathode and a pained metallic component as an anode. A DC power supply connected to the cathode and anode produces a plasma causing the paint from the painted metallic component to disintegrate.

Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.

An apparatus for removing paint from a metallic component. The apparatus includes an electrolytic cell in which the metallic component is an anode, and a DC power supply capable of producing a plasma causing the paint from the metallic component to disintegrate. A method of depainting a metallic component includes providing an electrolytic cell with the metallic component to be depainted acting as an anode. A DC power supply connected to the cathode and anode is activated to produce a plasma causing the paint from the metallic component to disintegrate. Another method of method of depainting a metallic component includes providing an aqueous solution of sodium hydrogen carbonate, sodium citrate, and potassium oxalate as an electrolyte, a cathode and a pained metallic component as an anode. A DC power supply connected to the cathode and anode produces a plasma causing the paint from the painted metallic component to disintegrate.

Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.

Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.