A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a process for tuning a plasma processing chamber is provided that include determining a position of a plasma within the processing chamber, selecting an inductance and/or position of an inductor coil coupled to a lid heater that shifts the plasma location from the determined position to a target position, and plasma processing a substrate with the inductor coil having the selected inductance and/or position.

This invention relates to enhancing a gas-phase reaction in a plasma comprising: creating plasma by at least one plasma source, and wherein that the method further comprises: generating ultrasonic high intensity and high power acoustic waves having a predetermined amount of acoustic energy by at least one ultrasonic high intensity and high power gas-jet acoustic wave generator, where said ultrasonic high intensity and high power acoustic waves are directed to propagate towards said plasma so that at least a part of said predetermined amount of acoustic energy is absorbed into said plasma, and where a sound pressure level of said generated ultrasonic high intensity and high power acoustic waves is at least substantially 140 dB and where an acoustic power of said generated ultrasonic high intensity and high power acoustic waves is at least substantially 100 W.

A method for producing a bonded plate-shaped assembly includes retaining a pair of plate-shaped members facing each other by a pair of retaining base members; charging a photo-curable liquid material between the pair of plate-shaped members facing each other; causing movement of the pair of retaining base members by a retaining base member movement unit to cause the pair of plate-shaped members to draw close to each other to cause wetting spreading of the liquid material between the pair of plate-shaped members; detecting a wetting spreading state of the liquid material by a sensor; and illuminating curing light, in response to the result of detection, to the liquid material wettingly spread to the entire surfaces of the pair of plate-shaped members, to form the bonded plate-shaped assembly made up of the pair of plate-shaped members bonded together.

A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas are ionized with external stimuli to generate energetic particles which facilitate a chalcogen-substitution reaction of a metal-based precursor gas in a reaction chamber to form uniform two-dimensional layered chalcogenide film of at least a single crystalline layer via chemical vapor deposition.

A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas are ionized with external stimuli to generate energetic particles which facilitate a chalcogen-substitution reaction of a metal-based precursor gas in a reaction chamber to form uniform two-dimensional layered chalcogenide film of at least a single crystalline layer via chemical vapor deposition.

Apparatus and methods for nanoplasma switches are disclosed. In certain embodiments, a nanoplasma switching system includes a nanoplasma radio frequency (RF) switch that receives an RF signal, and a nanoplasma DC switch that receives a DC bias voltage. The nanoplasma DC switch is positioned adjacent to but spaced apart from the nanoplasma RF switch. The nanoplasma DC switch induces a nanoplasma through the nanoplasma RF switch when the DC bias voltage is set to a first voltage level. By implementing the nanoplasma switching system in this manner, DC bias to turn on or off the nanoplasma RF switch can be realized without needing to use passive components such as DC blocking capacitors, choke inductors, or baluns for isolation.

The invention relates to a nanoplasma switch device, comprising: multiple electrically isolated electrodes; a gap separating the two electrodes; wherein the gap has a width which is dimensioned to effect the generation of a plasma by electric-field electron emission.