Generators and methods for igniting a plasma in a plasma chamber are disclosed. The generator includes an ignition profile generator that includes a data interface configured to receive a specification for voltage as a function of time and an ignition data generator configured to create an ignition profile from the specification. The generator also includes an ignition profile datastore to store the ignition profile and a waveform generator configured to apply a waveform with the ignition profile to an output of the generator.

A point etching module using an annular surface-discharge plasma apparatus is disclosed. The point etching module using an annular surface-discharge plasma apparatus comprises: a plate-shaped dielectric; a circular electrode disposed on and in contact with the upper surface of the dielectric; an annular electrode disposed on and in contact with the lower surface of the dielectric and providing a gas receiving space for receiving gas; and a power supplier for applying high voltage between the circular electrode and the annular electrode, wherein when the application of the high voltage starts an electric discharge, filament type plasma is irradiated toward a substrate to be treated, by using plasma flowing in the center direction of the annular electrode from between the inner surface of the annular electrode and the lower surface of the dielectric.

High aspect ratio features are formed in a substrate using etching and deposition processes. A partially etched feature is formed by exposure to plasma in a plasma etch chamber. A metal-based liner is subsequently deposited in the partially etched feature using the same plasma etch chamber. The metal-based liner is robust and prevents lateral etch in subsequent etching operations. The metal-based liner may be deposited at temperatures or pressures comparable to temperatures or pressures for etch processes. The metal-based liner may be localized in certain portions of the partially etched feature. Etching proceeds within the feature after deposition without lateral etching in regions where the metal-based liner is deposited.

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

A plasma processing device may include first and second processing devices. The first processing device may include a first chamber, a first exhaust pump which provides, into the first chamber, a first pressure equal to or higher than 0.1 Pa and equal to or lower than 0.3 Pa while depressurizing the first chamber, a first holding unit which holds resin, a first gas introduction unit which introduces, into the first chamber, first gas for desorbing at least a part of atoms constituting the resin from a surface of the resin when turned into plasma, and a first plasma generation unit which turns the first gas into plasma at the first pressure. The second processing device may include a grounded second chamber, a second exhaust pump which provides, into the second chamber, a second pressure equal to or higher than 30% and equal to or lower than 50% of the first pressure at which the desorption step has been performed while depressurizing the second chamber, a second holding unit which holds the resin processed in the first chamber and to which a first DC voltage may be applied, a second gas introduction unit which introduces, into the second chamber, second gas to generate hydroxyl radicals by being turned into plasma, and a second plasma generation unit which turns the second gas into plasma at the second pressure and to which a second DC voltage higher than the first DC voltage may be applied.

Disclosed is a plasma device including at least two plasma cells, and a command unit, wherein the first and the second electrodes of a given plasma cell are independent from the corresponding first and second electrodes of the contiguous plasma cells. The electrodes of contiguous plasma cells are independently connected to the command unit. The command unit includes a high voltage generator and a radiofrequency generator which are mutually protected by a filtering element.

A system and method for optimizing maintenance of a remote plasma source comprises recording data from a remote plasma source. The data comprises measurements of one or more operating characteristics of the remote plasma source over a period of time and a plurality of indications of system fault event. The method may include receiving the data; analyzing the data; and determining, based on correlations between the measurements of the one or more operating characteristics and the plurality of system fault events, a threshold of an operating point. The operating point may comprise the measurements of the one or more operating characteristics at a particular time. The threshold signifies a pending system fault event is probable to a defined degree of confidence within a specified window of time. The system provides a notification to perform preventative maintenance on the remote plasma source.

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

A method for plasma treating a target surface of a part, including: obtaining the target surface on the part; placing the part in a chamber of a plasma generator; evacuating the chamber to a pressure of between 10.sup.-6 and 10 mbar; injecting a suitable gas into the chamber until a pressure in the chamber of between 10.sup.-4 and 10.sup.2 mbar is reached; generating an electric current discharge within the chamber, via an electric generator, in order to generate a plasma; exposing the target surface of the part to the plasma for a predefined period of time depending on the power of the electric current discharge, on the gas injected into the chamber and on the material of the target surface, so as to deteriorate the surface condition of the target surface in order to increase the roughness thereof to make the target surface mat or more mat.

A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.