The invention relates to a method for the plasma treatment of an endoprosthesis having base body. The method includes inserting the base body into a vacuum chamber; executing a cleaning step with a plasma treatment of a surface of the base body that is to be coated; executing a treatment step in a plasma of the surface of the base body that is to be coated, wherein ions out of the plasma are implanted into an area of the base body that is close to the surface.

In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

Methods for forming fin structure with desired materials formed on different locations of the fin structure using a selective deposition process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes forming a patterned self-assembled monolayer on a circumference of a structure formed on a substrate, wherein the patterned self-assembled monolayer includes a treated layer formed among a self-assembled monolayer, and performing an atomic layer deposition process to form a material layer predominantly on the self-assembled monolayer from the patterned self-assembled monolayer.

In an ion bombardment apparatus of the present invention, a heating type thermal electron emission electrode formed by a filament is placed on one inner surface of a vacuum chamber, an anode for receiving a thermal electron from the thermal electron emission electrode is placed on another inner surface of the vacuum chamber, and a base material is placed between the thermal electron emission electrode and the anode. Further, the ion bombardment apparatus has a discharge power supply for generating a glow discharge upon application of a potential difference between the thermal electron emission electrode and the anode, a heating power supply for heating the thermal electron emission electrode so as to emit the thermal electron, and a bias power supply for applying negative pulse-shaped bias potential with respect to the vacuum chamber to the base material.

Disclosed are apparatus and methods for plasma processing on optical surfaces for anti-reflection (AR) treatments. The present disclosure enables efficient AR treatments and high performance of optical characters of materials having such AR coating. Narrow Gap Plasma Etching and Hollow Cathode Plasma Etching processes are disclosed according to some embodiment of the present invention. In some embodiments, the apparatus and methods are in combination of DC Bias Control to control physical (ion) bombardment and environment of the chamber (pressure and electric power) more closely, thus to control the processing more effectively.

Apparatus for treating the surface of objects with plasma, having: an enclosure; a means for placing this enclosure under vacuum; a zone for storing objects to be treated, which is called the upstream storing zone; a zone for storing treated objects, which is called the downstream storing zone; at least two plasma treatment chambers having a means for injecting an active gas mixture, a means for creating an electrical discharge and a means for confining the plasma to the volume inside the chamber; and a means for transferring between the storing zones and the chambers, characterized in that the transferring means are conveying means defining a conveying direction, and in that the various chambers are placed one behind the other, in the conveying direction, and in that the atmospheres of the various plasma treatment chambers are not hermetically sealed off from one another.

A system and method of ion milling performed in a plasma etch system including a plasma etch chamber, multiple process gas sources coupled to the plasma etch chamber, a radio frequency bias source and a controller. The plasma etch chamber including a substrate support. The substrate support being a non-pivoting and non-rotating substrate support. The substrate support capable of supporting a substrate to be processed on a top surface of the substrate support without use of a mechanical clamp device. The plasma etch chamber also including an upper electrode disposed opposite from the top surface of the substrate support. The radio frequency bias source is coupled to the substrate support. The controller is coupled to the plasma etch chamber, the multiple process gas sources and the radio frequency bias source. The controller including logic stored on computer readable media for performing an ion milling process in the plasma etch chamber.

A film forming apparatus includes a cylindrical evaporation source, an electrode, and a gas passage. The evaporation source is composed of metal and includes an internal space for accommodating a workplace. The electrode is arranged in the internal space of the evaporation source, The gas passage supplies gas to the internal space of the evaporation source from a space outside the evaporation source. The gas passage includes an end portion located in the internal space. The end portion of the gas passage includes a first section composed of a first material and a second section composed of a second material. The first material and the second material have different thermal expansion coefficients.

An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.

The embodiments disclosed herein pertain to methods and apparatus for depositing stress compensating layers and sacrificial layers on either the front side or back side of a substrate. In various implementations, back side deposition occurs while the wafer is in a normal front side up orientation. The front/back side deposition may be performed to reduce stress introduced through deposition on the front side of the wafer. The back side deposition may also be performed to minimize back side particle-related problems that occur during post-deposition processing such as photolithography.