A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

A plasma processing apparatus includes a chamber having an upper wall with a plurality of through holes and a lower wall with an exhaust hole, the chamber defining a plasma processing space; a substrate stage disposed within the chamber, the substrate stage having a seating surface, wherein a substrate is seated on the seating surface; a baffle plate disposed between the upper wall and the substrate stage, the baffle plate having gas distribution holes; a gas supply configured to supply gas into the chamber through the through holes; a pumping device having an exhaust pipe, the exhaust pipe connected to the exhaust hole to control pressure inside the chamber; and a plasma generator configured to generate a first plasma using the gas supplied into the chamber through at least one of the through holes formed in the upper wall.

Processing chamber components and methods of manufacture of same are provided herein. In some embodiments, a component part body includes a component part body having a base plane and at least one textured surface region, wherein the at least one textured surface region comprises a plurality of independent surface features having a first side having at least a 45 degree angle with respect to the base plane. In at least some embodiments, the textured surface includes a plurality of independent surface features which are pore free.

A plasma processing apparatus includes: a processing container extended in a longitudinal direction; a raw material gas supply configured to supply a raw material gas into the processing container; a plasma partition wall provided along the longitudinal direction of the processing container, defining a plasma generation space therein, and having an opening through which the plasma generation space and an inside of the processing container communicate with each other; a reaction gas supply configured to supply a reaction gas that reacts with the raw material gas, into the plasma generation space; and an opening/closing unit configured to open/close the opening.

A plasma processing apparatus includes a chamber, a window plate disposed in an upper portion of the chamber and having a fastening hole defined therein, an injector having a body part including a plurality of nozzles and configured to be fastened to the fastening hole, and a flange part extending radially from the body part to partially cover a bottom surface of the window plate when the body part is fastened to the fastening hole, and a stopper configured to be fastened to the body part on an upper surface of the window plate to hold the injector in the fastening hole when the body part is fastened to the fastening hole.

Gas distribution apparatuses, e.g., showerheads, comprise passages having a first conical bore section, a small bore section, and a second conical bore section. The first conical bore sections comprise a first non-perpendicular wall angle relative to a back surface of a faceplate. The second conical bore sections comprise a second non-perpendicular angle to a front surface of the faceplate. The conical sections including non-perpendicular angles are effective to mitigate and/or eliminate changes in flow parameters through the passages after bead blast processes.

A plasma-enhanced thin-film-deposition equipment includes a chamber, a carrier, a showerhead, an annular isolator and a radio-frequency coil. The chamber includes a containing space, the carrier is disposed within the containing space and provided with a carrying surface for carrying at least one substrate. The showerhead is fluidly connected to the containing space, and the showerhead is provided with a plurality of gas-outlets facing the carrying surface. The annular isolator is provided with a mounting space, and the carrier, the showerhead and the annular isolator define a reacting space, wherein the mounting space is isolated from the reacting space. The showerhead is configured to distribute a precursor into the reacting space, and the radio-frequency coil is disposed within the mounting space and coupled to a radio-frequency power supply, so as to enhance a plasma of the precursor for a thin-film-deposition process.

A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21′) disposed at the top of the cavity (20), a base (22 ) and a process assembly (24) surrounding the base (22) are disposed in the precleaning chamber (100, 200, 300), and the base (22), the process assembly (24 ) and the dielectric window (21, 21′) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20) located below the base (22) is used as a loading/unloading sub-cavity (202), the precleaning chamber (100, 200, 300) further comprises a gas is device (32), the gas inlet device (32) comprises a gas inlet (323), and the gas inlet (323) is configured to directly transport a process gas into the process sub-cavity (211) from above the process assembly (24). The precleaning chamber (100, 200, 300) not only shortens the gas inlet path of the process gas, but also reach a desired plasma density under the conditions where a relatively small amount of process gas is introduced, thereby reducing the usage cost.

An apparatus of processing a target substrate is provided. The apparatus includes a processing chamber having a substantially cylindrical inner space, a mounting table disposed in the processing chamber and configured to mount thereon the target substrate, at least one supply line configured to supply a gas in a direction along an inner wall surface of a sidewall of the processing chamber to generate a swirl flow of the gas in the processing chamber, and a ventilator configured to exhaust the gas from the processing chamber. Further, in a direction intersecting an axis of the substantially cylindrical inner space, a flow velocity of the gas in a first region close to the inner wall surface is higher than a flow velocity of the gas in a second region where the mounting table is disposed.