To provide an electronic component having a protective film formed with good uniformity, over the entire surface thereof. The electronic component has a protective film formed over the entire surface thereof, and the electronic component has elements and wirings formed on a base body. The protective film is formed by a CVD method, over an entire surface of the electronic component, by: arranging an electrode in a chamber; grounding one side of the chamber and the electrode; accommodating the electronic component in the chamber; supplying a raw material gas to the chamber; rotating or swinging the chamber and thereby moving the electronic component in the chamber; supplying high-frequency power to the other side of the chamber and the electrode; and generating a raw-material-gas-based plasma between the electrode and the chamber.

A film forming apparatus comprises a film forming vessel comprising a first mold and a second mold that is arranged to be opposed to the first mold. The first mold is configured to include a first recessed portion and a first planar portion arranged around the first recessed portion and an exhaust port in a bottom portion of the first recessed portion. The film forming apparatus also comprises a seal member placed between the first planar portion of the first mold and the second mold. The seal member is configured to keep inside of the film forming vessel airtight; and an exhaust device connected with the exhaust port. The work is placed away from the first planar portion such that a film formation target part of the work faces an internal space of the first recessed portion when the film forming vessel is closed. A film forming method comprises (a) forming a film on part of the work by the film forming apparatus; (b) opening the film forming vessel after the (a); and (e) at a start of the (b), evacuating the film forming vessel via the exhaust port by the exhaust device.

A coating device including a housing case capable of housing therein a plurality of processing targets and configured to coat the plurality of processing targets with a gaseous component by taking gas into the housing case. A rotation body is configured to rotate the housing case. The housing case includes a through-hole for taking gas inside and a stirring plate protruding from an internal wall of the housing case is used to stir the plurality of processing targets.

A plasma processing apparatus includes a chamber, a mounting table for mounting thereon a target object in the chamber, a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber, a first gas introduction unit for introducing a first gas into the chamber from the ceiling wall, and a second gas introduction unit for introducing a second gas into the chamber from a location between the ceiling wall and the mounting table. The second gas introduction unit includes a ring-shaped member having a plurality of gas injection holes and provided at a predetermined height position between the ceiling wall and the mounting table, and a leg part which connects the ceiling wall and the ring-shaped member. The second gas is supplied to the ring-shaped member through the leg part.

A plasma processing apparatus including a vacuum chamber comprising a conduit, a process chamber, and a first gas input port for introducing gas into the vacuum chamber, and a pump port for evacuating gas from the vacuum chamber. A magnetic core surrounds the conduit. An output of an RF power supply is electrically connected to the magnetic core. The RF power supply energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the vacuum chamber. A platen that supports a workpiece during plasma processing is positioned in the process chamber.

Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.

A substrate processing apparatus includes: a substrate holder to vertically load a plurality of substrates in multiple stages with an interval therebetween and including a plurality of partition plates vertically partitioning a region where the plurality of substrates are loaded; a process chamber to receive the substrate holder therein; protrusions protruding inward toward the outer circumferential surfaces of the partition plates from an inner circumferential wall surface within the process chamber, which faces the outer circumferential surfaces of the partition plates, to form clearances between inner circumferential surfaces formed on the protruding tip ends of the protrusions and the outer circumferential surfaces of the partition plates; and a gas supply part to supply inert gas into the clearances, which are formed between the inner circumferential surfaces of the protrusions and the outer circumferential surfaces of the partition plates, to form positive-pressure sections subjected to a pressure higher than ambient pressure.

A production apparatus for fine particles includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a fine particle collection device connected to the vacuum chamber and collecting fine particles. The fine particles are produced from the material by generating electric discharge inside the vacuum chamber. The apparatus includes an inner chamber which forms an outside space with respect to the vacuum chamber installed between a wall of the vacuum chamber and a plasma generation region and gas supply pipes which supply a gas to the outside space between the wall of the vacuum chamber and a wall of the inner chamber.

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.