Certain examples described herein relate to a sputter deposition apparatus including a guiding member to guide a substrate in a conveyance direction, a plasma source to generate a plasma, and a magnet arrangement. The magnet arrangement is configured to confine the plasma within the apparatus to a pre-treatment zone, within which the substrate is exposed to the plasma in use. The magnet arrangement is also configured to confine the plasma within the apparatus to a sputter deposition zone, located after the pre-treatment zone in the conveyance direction, to provide for sputter deposition of a target material to the substrate in use. The pre-treatment and sputter deposition zones are disposed about the guiding member.

A plasma processing apparatus according to one aspect includes a chamber body providing a chamber, the chamber body including a side wall, an opening being formed on the side wall, a stage provided in the chamber, a ceiling facing the stage, a gas supply system configured to supply a processing gas to the chamber, a power supply configured to supply electric power, and a wall that forms a processing space having a volume smaller than a volume of the chamber in the chamber. At least a part of the wall is movable between a position overlapping with a transport path extending between the processing space and the opening and a position not overlapping with the transport path, and the wall forms the processing space when the at least a part of the wall is disposed at the position overlapping with the transport path.

A method and apparatus for reducing as-deposited and metastable defects relative to amorphous silicon (a-Si) thin films, its alloys and devices fabricated therefrom that include heating an earth shield positioned around a cathode in a parallel plate plasma chemical vapor deposition chamber to control a temperature of a showerhead in the deposition chamber in the range of 350° C. to 600° C. An anode in the deposition chamber is cooled to maintain a temperature in the range of 50° C. to 450° C. at the substrate that is positioned at the anode. In the apparatus, a heater is embedded within the earth shield and a cooling system is embedded within the anode.

A substrate processing apparatus (100), comprising a reaction chamber (20) having an upper portion (20a) and a lower portion (20b) sealing an inner volume of the reaction chamber (20) for substrate processing, the lower portion (20b) being movable apart from the upper portion (20a) to form a substrate loading gap therebetween, a substrate support system comprising a support table (31) and at least one support element (70) vertically movable in relation to the support table (31) and extending through the support table (31) to receive a substrate within the reaction chamber (20), and a stopper (90) stopping a downward movement of the at least one support element (70) at a substrate loading level.

A film formation device includes a target holder configured to hold a target for emitting sputtering particles in a processing space inside a processing chamber, a sputtering particle emitting part configured to emit the sputtering particles from the target, a sputtering particle shielding plate having a passage hole through which the emitted sputtering particles pass, a shielding member provided to shield the passage hole, a movement mechanism configured to move the shielding member in the horizontal direction, and a controller. The controller controls the shielding member, which has the placement portion on which a substrate is placed, to be moved in one direction of the horizontal direction, and controls the sputtering particles to be emitted from the target. The sputtering particles passed through the passage hole are deposited on the substrate.

A substrate processing system installed on a floor face is provided. The substrate processing system includes a substrate transfer module, a supporting table including a top plate disposed separately from the floor face, a plurality of substrate processing modules disposed on the top plate and coupled to the substrate transfer module along a lateral side of the substrate transfer module, and a plurality of power units disposed below the top plate. Further, the plurality of power units correspond to the plurality of substrate processing modules, respectively, and each of the power units is configured to supply electric power to the corresponding processing module.

An apparatus includes a lift pinto raise and lower a semiconductor substrate relative to a substrate support assembly in a processing chamber. The lift pin includes a top end having a conical shape tapering downwardly and a bottom end having a cylindrical shape. The apparatus comprises a lift pin holder to hold the bottom end of the lift pin.

Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The processing system can include a loadlock chamber, a transfer chamber, and at least two processing chamber having two or more processing stations. The processing system further includes a storage chamber for storing replaceable parts. The transfer chamber includes a workpiece handling robot. The workpiece handling robot can be configured to transfer a plurality of replaceable parts from the processing stations to the storage chamber.

A plasma source ion implanter with a preparation chamber for linear or cross transferring workpiece is provided to solve the problem of low production efficiency of an existing single vacuum chamber plasma source ion implanter. The ion implanter includes a preparation chamber, an implantation chamber and a workpiece transferring chamber. The implantation chamber is provided to maintain a high vacuum condition all the time, and the time for pre-vacuuming the base vacuum is ignored. The ion implanter with dual chamber configuration is able to greatly shorten the production cycle. The structural configurations of the preparation chamber and the implantation chamber are basically the same, and are adapted to be used independently when ion implantation is required for a long time.

A substrate processing apparatus according to an embodiment includes a door portion that is arranged so as to be capable of opening and closing an opening portion from inside a second container and is configured to airtightly seal a first container, and the door portion includes a peripheral area that includes a surface facing a side wall of the second container around the opening portion while the door portion is in a closed state, an inside area that is an area surrounded by the peripheral area and includes a surface facing the opening portion while the door portion is in the closed state, a groove portion that is provided in the peripheral area to surround at least part of the inside area and includes a first step and a second step, the second step being positioned closer to the inside area than the first step, and a sealing member that continuously surrounds the inside area at a position closer to the inside area than the first step.