A mechanical feedthrough apparatus is provided to be mounted on a pivot base of a vacuum apparatus. A first axial tube of the mechanical feedthrough apparatus is pivotally connected to the pivot base and a second axial tube of the mechanical feedthrough apparatus is inserted into the first axial tube. An external cone surface of the second axial tube contacts with an internal cone surface of a first axial tube such that the second axial tube is close-fitted to the first axial tube.

A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220 C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

A vacuum atmosphere exchange device used in a vacuum sputtering apparatus is provided. The vacuum atmosphere exchange device has a substrate transferring track. The vacuum atmosphere exchange device has a cooling device disposed along a transferring path of the substrate transferring track to rapidly cool down a film formation substrate on the substrate transferring track. A vacuum sputtering apparatus is also provided. By using the vacuum sputtering apparatus and the vacuum atmosphere exchange device thereof, the substrate after the deposition process can be rapidly cooled down such that the problem of film quality caused by high temperature and temperature non-uniformity can be resolved.

Implementations described herein generally relate to metal oxide deposition in a processing chamber. More specifically, implementations disclosed herein relate to a combined chemical vapor deposition and physical vapor deposition chamber. Utilizing a single oxide metal deposition chamber capable of performing both CVD and PVD advantageously reduces the cost of uniform semiconductor processing. Additionally, the single oxide metal deposition system reduces the time necessary to deposit semiconductor substrates and reduces the foot print required to process semiconductor substrates. In one implementation, the processing chamber includes a gas distribution plate disposed in a chamber body, one or more metal targets disposed in the chamber body, and a substrate support disposed below the gas distribution plate and the one or more targets.

A method for coating a curved substrate is disclosed, which includes: providing a coating device including: a chamber, a carrying platform, a sputtering mechanism, and a position-adjusting mechanism, wherein the carrying platform is disposed in the chamber and has a first surface, the sputtering mechanism is disposed in the chamber and is disposed corresponding to the carrying platform, and the position-adjusting mechanism is disposed in the chamber; providing a curved substrate, wherein the curved substrate is disposed on the first surface of the carrying platform and the curved substrate has a second surface; adjusting the sputtering mechanism to different positions by the position-adjusting mechanism; and sputtering a coating material to different parts of the second surface of the curved substrate by the sputtering mechanism at the different positions.

The present disclosure relates to a portable plasma device which is convenient to carry and has excellent performance and is capable of simply, uniformly, and locally treating an inner surface of a microstructure such as a microwell plate by easily adjusting a plasma flame.

The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2; target holding parts 4 for holding the targets T inside the vacuum chamber 2; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

Apparatus and method for physical vapor deposition (PVD) are provided. The apparatus can include a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; a substrate support having a support surface to support the substrate at a non-perpendicular angle to the stream of material flux, wherein the substrate support and linear PVD source are movable with respect to each other along an axis that is parallel to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move completely over a surface of the substrate disposed on the substrate support during operation; and a selectively sealable aperture disposed between the linear PVD source and the substrate support, the selectively sealable aperture including two movable shields that are independently movable and configured to control a size and location of the selectively sealable aperture.

A sputter unit is introduced comprising a housing, a gas inlet, an interface for removable connecting the sputter unit to a vacuum chamber, a gas outlet arranged for supplying a process gas received via the gas inlet to the vacuum chamber, an interface for removable connecting the sputter unit to a base unit comprising a vacuum pump for generating a vacuum in the vacuum chamber, and a transformer arranged in the housing for increasing a supply voltage into an ionisation voltage for ionising the process gas supplied via the gas outlet to the vacuum chamber.

An apparatus with a deposition source and a substrate holder having a source mounting portion, which is rotatable about a first axis, a shielding element, which is disposed between the deposition source and the substrate holder, and a drive arrangement. The deposition source has a material outlet opening from which material is emitted. A longitudinal axis of an elongate central region of the material outlet opening extends parallel and centrally between the edges of the material outlet opening. The deposition source is mounted to the source mounting portion such that the longitudinal axis of the central region is parallel to the first axis. The shielding element has an aperture. The drive arrangement controls rotation of the source mounting portion, adjustment of a width of the aperture, and relative movement between the substrate holder and both the source mounting portion and the shielding element.