A holding assembly for retaining a deposition ring about a periphery of a substrate support in a substrate processing chamber, the deposition ring comprising a peripheral recessed pocket with a holding post. The holding assembly comprises a restraint beam capable of being attached to the substrate support, the restraint beam comprising two ends, and an anti-lift bracket. The anti-lift bracket comprises a block comprising a through-channel to receive an end of a restraint beam, and a retaining hoop attached to the block, the retaining hoop sized to slide over and encircle the holding post in the peripheral recessed pocket of the deposition ring.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

Embodiments of the present disclosure relate to a rotatable electrostatic chuck. In some embodiments, a rotatable electrostatic chuck includes a dielectric disk having at least one chucking electrode and a plurality of coolant channels; a cryogenic manifold coupled to the dielectric disk and having a coolant inlet and a coolant outlet both of which are fluidly coupled to the plurality of coolant channels; a shaft assembly coupled to the cryogenic manifold; a cryogenic supply chamber coupled to the shaft assembly; a supply tube coupled to the cryogenic supply chamber and to the coolant inlet to supply the cryogenic medium to the plurality of coolant channels, wherein the supply tube extends through the central opening of the shaft assembly; and a return tube coupled to the coolant outlet and to the cryogenic supply chamber, wherein the supply tube is disposed within the return tube.

A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Aspects of the disclosure provided herein generally provide a substrate processing system that includes: a processing chamber including: a top plate having an array of process station openings disposed therethrough surrounding a central axis, a bottom plate having a first central opening, and a plurality of side walls between the top plate and the bottom plate; a plurality of heaters disposed in the top plate and the bottom plate and configured in a plurality of regions; and a system controller configured to independently control the plurality of heaters in each region.

The present invention provides a device for sputtering a material onto a substrate having a surface. The device comprises a chamber that has a target window where sputtering of the surface of the substrate takes place, via a force produced by a pair of magnets. The magnets are moved across the surface of the substrate via a motor of the device. Furthermore, a method of using such a device for sputtering is also contemplated.

A sputtering chamber particle trap comprises first and second patterns formed on at least a portion of a surface of the particle trap. The first pattern includes one of: first indentations having a first depth and separated by first and second threads, and first ridges having a first height and separated by first and second grooves. The second pattern is formed on at least a portion of the first pattern and includes one of: second indentations having a second depth and separated by third and fourth threads, and second ridges having a second height and separated by third and fourth grooves. A method of forming a particle trap on a sputtering chamber component is also disclosed.

There is provided a holding apparatus which is capable of rotatably holding, while cooling to a cryogenic temperature, a to-be-processed object in a vacuum chamber. A holding apparatus for rotatably holding, while cooling, a to-be-processed object in a vacuum chamber Vc, has a stage on which the to-be-processed object is placed, a rotary drive device for rotatably supporting the stage, and a cooling device for cooling the stage. Provided that a stage surface side on which the to-be-processed object is placed is defined as an upside, the rotary drive device has: a tubular rotary shaft body which is mounted on a wall surface of the vacuum chamber, in a penetrating manner, through a first vacuum seal; a connection member for connecting an upper end part of the rotary shaft body and a lower surface of the stage in a manner to define a space below the stage; and a driving motor for driving to rotate the rotary shaft body.

Provided is a beam intensity converting film that has sufficient shielding property, sufficient durability, and sufficient heat resistance and that can reduce the extent of radioactivation. An attenuator is constituted by a graphite film placed such that a surface thereof intersects the beam axis of a charged particle beam, the graphite film has a thickness of 1 m or greater, and the thermal conductivity in a surface direction of the graphite film is equal to or greater than 20 times the thermal conductivity in the thickness direction of the graphite film.

According to one embodiment, a film formation apparatus and a moisture removing method thereof that can facilitate the removement of moisture in the chamber without the complication of the apparatus are provided. The film formation apparatus according to the present embodiment includes the chamber 10 which an interior thereof can be made vacuum, the exhauster 20 that exhausts the interior of the chamber 10, the carrier 30 that circularly carries the workpiece W by a rotation table 31 provided inside the chamber 10, and the plurality of the plasma processor 40 that performs plasma processing on the workpiece W which is circularly carried, in which the plurality of the plasma processor 40 each has the processing spaces 41 and 42 to perform the plasma processing, at least one of the plurality of the plasma processor 40 is the film formation processor 410 that performs film formation processing by sputtering on the workpiece W which is circularly carried, and at least one of the plurality of the plasma processor 40 is the heater 420 that removes moisture in the chamber 10 by producing plasma and heating the interior of the chamber 10 via the rotation table 31 together with exhaustion by the exhauster 20 and rotation by the rotation table 31 in a condition the film formation process by the film formation processor 410 is not performed.