A method is provided for forming a three-dimensional article through successively depositing individual layers of powder material that are fused together so as to form the article. The method includes: providing at least one electron beam source emitting an electron beam; providing a leakage current detector for sensing a current through the anode and/or the Wehnelt cup; providing a low impedance voltage source connectable to the Wehnelt cup via a switch, where the voltage source is having a more negative potential than a negative potential applied to the cathode; and protecting the cathode against vacuum arc discharge energy currents when forming the three-dimensional article by providing the Wehnelt cup to the low impedance negative voltage by closing the switch when the leakage current detector is sensing a current through the anode and/or the Wehnelt cup which is higher than a predetermined value.

An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

A high voltage inspection system that includes a vacuum chamber; electron optics that is configured to direct an electron beam towards an upper surface of a substrate; a substrate support module that comprises a chuck and a housing; wherein the chuck is configured to support a substrate; wherein the housing is configured to surround the substrate without masking the electron beam, when the substrate is positioned on the chuck during a first operational mode of the high voltage inspection system; and wherein the substrate, the chuck and the housing are configured to (a) receive a high voltage bias signal of a high voltage level that exceeds ten thousand volts, and (b) to maintain at substantially the high voltage level during the first operational mode of the high voltage inspection system.

A technique disclosed in the present specification relates to an ion implanter capable of preventing a semiconductor substrate from being damaged by an abnormal electric discharge through a simple method. The ion implanter of this technique includes an ion irradiation unit configured to irradiate a surface of a semiconductor substrate with ions. The ion implanter also includes at least one electrode (needle electrode, annular electrode) disposed in a position in the vicinity of at least one of back and side surfaces of an end of the semiconductor substrate. The position is dischargeable to and from the semiconductor substrate. The at least one electrode (needle electrode, annular electrode) is spaced apart from the semiconductor substrate.

A plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. A pulsed power supply comprising at least two solid state switches and having an output that is electrically connected between the anode and the cathode assembly generates voltage micropulses. A pulse width and a duty cycle of the voltage micropulses are generated using a voltage waveform comprising voltage oscillation having amplitudes and frequencies that generate a strongly ionized plasma.

An apparatus for suppression of arcs in an electron beam generator including: a first module providing an operating voltage; a second module including a coil suitable for a voltage of at least 10 kV, and at least one free-wheeling diode connected in parallel to the coil; a third module including a first circuit component configured to detect a first actual value for electric voltage, and a first signal is producible when the first actual value falls below a first threshold value, a second circuit component by which a second actual value for electric current is detectable, and a second signal is generated when the second actual value exceeds a second threshold value, a control logic, which optionally links the first and second signals and a resultant output signal is producible; a semiconductor-based switch suitable for the voltage of at least 10 kV, which is opened based on the output signal.

A multi-beam particle microscope can reduce particle beam-induced traces on a sample at which a high voltage is present. The occurrence of additional residual gas in the sample chamber is reduced using a specific objective lens cable and/or a specific sample stage cable, which are specifically shielded.

In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

A technique disclosed in the present specification relates to an ion implanter capable of preventing a semiconductor substrate from being damaged by an abnormal electric discharge through a simple method. The ion implanter of this technique includes an ion irradiation unit configured to irradiate a surface of a semiconductor substrate with ions. The ion implanter also includes at least one electrode (needle electrode, annular electrode) disposed in a position in the vicinity of at least one of back and side surfaces of an end of the semiconductor substrate. The position is dischargeable to and from the semiconductor substrate. The at least one electrode (needle electrode, annular electrode) is spaced apart from the semiconductor substrate.