Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.

It is an object of the present invention to provide a plasma generator capable of efficiently identifying the cause of an abnormal stoppage when an abnormal stoppage of the plasma generator occurs. When the controller determines that at least one detected value has become an abnormal value, the controller terminates plasma generation control. Further, in response to starting plasma generation control, the controller causes the storage section to store a history of detected values in association with time. As a result, it is possible to provide a history of detected values stored in the storage section to efficiently identify the cause of the abnormal stoppage.

A plasma processing apparatus includes a chamber; an apparatus-side controller configured to control plasma processing in the chamber; and a monitoring unit configured to monitor a monitoring target that is disposed within the chamber, or is connected directly or indirectly to the chamber. The apparatus-side controller sets the monitoring target and a timing at which monitoring target information is to be acquired. The monitoring unit acquires the monitoring target information transmitted from the monitoring target to the apparatus-side controller, detects an occurrence of an abnormality in the chamber based on the monitoring target information, and controls the monitoring target for the chamber in which the abnormality occurs.

An electron gun includes an emitter, an electron gun electrode, and a short-circuiting mechanism for setting the emitter and the electron gun electrode at the same potential. The short-circuiting mechanism includes a first switch member provided with a first switch electrode that is connected to the emitter and a second switch electrode that is connected to the electron gun electrode, a second switch member provided with a third switch electrode, and a drive unit that operates at least one of the first switch member and the second switch member to switch between a state in which the first switch electrode and the second switch electrode are in contact with the third switch electrode and a state in which the first switch electrode and the second switch electrode are separated from the third switch electrode. The short-circuiting mechanism has the same potential as a predetermined voltage.

The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

Provided is plasma processing equipment comprising a substrate support, a focus ring disposed along an edge of the upper surface of the substrate support and including a fluid hole passing through a main body, an insulating ring surrounding an outer sidewall of the substrate support and including an inner side surface facing the outer sidewall of the substrate support, an outer side surface, and an upper surface connecting the inner and outer side surfaces. and including upper and lower end portions having different heights, and a connection end portion connecting the upper and lower end portions, a liner surrounding the outer side surface of the insulating ring and a baffle disposed on an upper surface of the liner, wherein a fluid passing through the fluid hole flows along the upper surface, and the baffle generates a pressure difference of the fluid between the upper and lower end portions.

Provided are a charged particle beam generator and a charged particle beam device that can improve insulation reliability as a result of reducing the high electric field generated around a connection section for a conductor. The charged particle beam generator 100 has: a plug 151 that guides high voltage from outside to a charged particle source that is in a vacuum; and a socket 251 having the charged particle source attached thereto. An electric field reduction ring 161 that electrically connects to one of a plurality of conductors that guide high voltage is embedded inside the tip of the plug 151. The plurality of conductors that guide the high voltage are arranged so as to penetrate the electric field reduction ring 161.

Provided are a charged particle beam generator and a charged particle beam device that can improve insulation reliability as a result of reducing the high electric field generated around a connection section for a conductor. The charged particle beam generator 100 has: a plug 151 that guides high voltage from outside to a charged particle source that is in a vacuum; and a socket 251 having the charged particle source attached thereto. An electric field reduction ring 161 that electrically connects to one of a plurality of conductors that guide high voltage is embedded inside the tip of the plug 151. The plurality of conductors that guide the high voltage are arranged so as to penetrate the electric field reduction ring 161.

An electrostatic chuck can be manufactured at low cost and can securely prevent arcing even if the main body of the electrostatic chuck is thin. This electrostatic chuck is provided with an electrostatic chuck main body, an arcing prevention member, and a metal base member. The electrostatic chuck main body and the metal base member are provided with a plurality of vertical cooling gas holes. The arcing prevention member includes: a ceramic plate-shaped body through which a plurality of fine holes 20-100 μm in diameter pass; and an exterior member that secures the ceramic plate-shaped body and is disposed in an upper part of the vertical cooling gas holes. The ceramic plate-shaped body is thicker than the electrostatic chuck main body.

In one embodiment, a multi-beam blanking device includes a semiconductor substrate, an insulating film that is disposed on the semiconductor substrate, an antistatic film that is disposed on the insulating film, a plurality of cells each of which is related to a through-hole that penetrate the semiconductor substrate and the insulating film and each of which includes a blanking electrode and a ground electrode that are disposed on the insulating film, and a ground wiring line that is disposed in the insulating film. The antistatic film and the ground wiring line are connected to each other at a joint that extends through the insulating film on the ground wiring line.