A charged particle beam system includes a charged particle beam device 101 and the detection circuit 114. The charged particle beam device 101 includes a first antenna 102 having a first resonant frequency and a second antenna 103 having a second resonant frequency. The detection circuit 114 includes a first amplitude detection unit 110 which detects a first amplitude of a signal after passing a first filter 107, a second amplitude detection unit 111 which detects a second amplitude of a signal after passing a second filter 108, and an amplitude comparison unit 113 which compares the first amplitude with the second amplitude.

The present disclosure relates to a charged particle beam device intended to appropriately measure the amount of foreign substances in a vacuum chamber. As one aspect for achieving the above object, proposed is a charged particle beam device including a charged particle beam column (9) configured to irradiate a sample with a charged particle beam, vacuum chambers (1, 2) configured to create a vacuum around the sample, a plurality of electrodes (12) arranged in the vacuum chambers, and a capacitance measuring device (13) for measuring the capacitance between the plurality of electrodes.

In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

It is an object of the present invention to provide a plasma generator capable of efficiently identifying the cause of an abnormal stoppage when an abnormal stoppage of the plasma generator occurs. When the controller determines that at least one detected value has become an abnormal value, the controller terminates plasma generation control. Further, in response to starting plasma generation control, the controller causes the storage section to store a history of detected values in association with time. As a result, it is possible to provide a history of detected values stored in the storage section to efficiently identify the cause of the abnormal stoppage.

A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

The present invention relates to a plasma diagnosing system and method, and more particularly, to a system and a method for diagnosing plasma in real time using a change in a capacitance sensed by an electrode using a reference waveform having a frequency different from a plasma discharging frequency band region. The sensed capacitance varies before and after discharging plasma and the plasma is diagnosed using the change in capacitance in real time.

A tool that suppresses or altogether eliminates arcing between a substrate pedestal and substrate is disclosed. The tool includes a processing chamber, a substrate pedestal for supporting a substrate within the processing chamber, and shower head positioned within the processing chamber. The shower head is arranged to dispense gas that is turned into a plasma, which develops a DC self-bias potential on the substrate surface. The tool also includes a bias control system configured to induce a DC potential to the substrate at a deliberate target electrical potential.

In a substrate processing apparatus for processing a substrate, a processing chamber accommodating the substrate is provided. A mounting table is disposed in the processing chamber and configured to attract and hold the substrate using an electrostatic attractive force. A charge amount measurement unit is disposed in the processing chamber and configured to measure charge amount of a substrate attraction surface of the mounting table. A charge neutralization mechanism is configured to neutralize the substrate attraction surface of the mounting table. A retreating mechanism is configured to make the charge amount measurement unit retreat from a measurement position facing the substrate attraction surface of the mounting table.

Disclosed herein is a flood column for projecting a charged particle flooding beam along a beam path towards a sample to flood the sample with charged particles prior to assessment of the flooded sample using an assessment column, the flood column comprising: an anchor body arranged along the beam path; a lens arrangement arranged in a down-beam part of the flood column; and a lens support arranged between the anchor body and the lens arrangement; wherein the lens support is configured to position the lens arrangement and the anchor body relative to each other; the lens support comprises an electrical insulator; and the lens support is in the direct line of sight of at least a portion of the beam path in the down-beam part.

In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.