Provided is an insulating structure used in a vacuum for a charged particle beam device, the insulating structure including: an anode; a cathode facing the anode; and an insulator disposed between the anode and the cathode, wherein the insulator has: an insulator flat surface; and an insulator convex portion protruding from the insulator flat surface, the cathode has: a cathode flat surface; and a cathode concave portion which is recessed from the cathode flat surface and into which the insulator convex portion is fitted; the insulator flat surface and the cathode flat surface are not in contact with each other; and an outer surface of the insulator convex portion and an inner surface of the cathode concave portion are not in contact with each other.

A substrate treating apparatus includes a housing, treating space and support unit to support a substrate, dielectric plate, gas supply unit, and plasma source to generate a plasma and including a top edge electrode above the edge region supported by the support unit and bottom edge electrode below the edge region supported by the support unit, which includes a support plate having an inner space and vacuum hole that communicates with the inner space and sucking the substrate on the top surface. A lift pin assembly can transfer the substrate between an outside transfer unit and the support plate. A decompression unit can apply negative pressure to the inner space. The lift pin assembly includes a base plate and through hole penetrating the base plate to provide negative pressure in a region under the base plate to a region over the base plate. Lift pins protrude from the base plate and support a bottom substrate surface. A driver can lift/lower the base plate within the inner space.

An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

A plasma processing apparatus includes a chamber; an apparatus-side controller configured to control plasma processing in the chamber; and a monitoring unit configured to monitor a monitoring target that is disposed within the chamber, or is connected directly or indirectly to the chamber. The apparatus-side controller sets the monitoring target and a timing at which monitoring target information is to be acquired. The monitoring unit acquires the monitoring target information transmitted from the monitoring target to the apparatus-side controller, detects an occurrence of an abnormality in the chamber based on the monitoring target information, and controls the monitoring target for the chamber in which the abnormality occurs.

A plasma processing device includes: a chamber; a flat-plate-shaped first electrode; a first high frequency power supply; a helical second electrode disposed outside the chamber and disposed to face the first electrode with a quartz plate forming an upper lid of the chamber therebetween; and a gas introducing unit, in which a second high frequency power supply and a third high frequency power supply are configured to be electrically connected to the second electrode, the second high frequency power supply being configured to apply an AC voltage of a second frequency to the second electrode, the third high frequency power supply being configured to apply an AC voltage of a third frequency to the second electrode, and the third frequency being higher than the second frequency; and two types of AC voltages are configured to be simultaneously applied.

An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

A control mechanism for a high-voltage generator that provides voltage and current to an electronic radiation source in a high-temperature environment is provided, the control mechanism including at least an intermediate enveloping ground plane, and a ground-plane potential monitoring system that provides an input to a control processor that in turn drives the high-voltage generator. A method of controlling a high-voltage generator that powers an electronic radiation source is also provided, the method including at least: measuring an enveloping ground plane potential such that a change in the potential of said enveloping ground plane surrounding the generator is monitored and used to determine the beginning of one or more of a partial discharge and flash-over event.

A manufacturing method of a semiconductor device includes the steps of: (a) placing a semiconductor wafer over a stage provided in a chamber, the pressure in the inside of which is reduced by vacuum pumping; and (b) after the step (a), forming plasma in the chamber in a state where the semiconductor wafer is adsorbed and held by the stage, so that desired etching processing is performed on the semiconductor wafer. Herein, before the step (a), O.sub.2 gas, negative gas having an electronegativity higher than that of nitrogen gas, is introduced into the chamber to form O.sub.2 plasma in the chamber, thereby allowing the charges remaining over the stage to be eliminated.

Disclosed is an electron beam emission device comprising a housing which defines a space in which electron beams are accelerated, and has an opening at the other side thereof through which the electron beams are emitted; a cathode which is disposed at one side in the housing, and emits the electrons; an anode which is positioned in the housing so as to be spaced apart from the cathode toward the other side, and accelerates the electrons emitted from the cathode; and an insulation holder which insulates a portion between the cathode and the housing, and fixes the cathode, wherein the cathode has a surface which faces the anode and is formed concavely to have a gradient, and a rim of the surface of the cathode, which has the gradient, is formed to be rounded.

Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.