The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking 5 part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.

Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF.sub.4) and hydrogen (H.sub.2) gases to an ion implantation apparatus, so H.sub.2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF.sub.4 and H.sub.2 are present in a volume ratio (GeF.sub.4:H.sub.2) in the range of 3:1 to 33:67. The use of the H.sub.2 gas in an amount in mixture or relative to the GeF.sub.4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge.sup.+ current gain and W.sup.+ peak reduction during au ion implantation procedure.

Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

According to one embodiment, a member for a semiconductor manufacturing device includes an alumite base material including a concavity, and a first layer formed on the alumite base material and including an yttrium compound. The first layer includes a first region, and a second region provided in the concavity and located between the first region and the alumite base material. An average particle diameter in the first region is shorter than an average particle diameter in the second region.

A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF.sub.4) and hydrogen (H.sub.2) gases to an ion implantation apparatus, so H.sub.2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF.sub.4 and H.sub.2 are present in a volume ratio (GeF.sub.4:H.sub.2) in the range of 3:1 to 33:67. The use of the H.sub.2 gas in an amount in mixture or relative to the GeF.sub.4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge.sup.+ current gain and W.sup.+ peak reduction during an ion implantation procedure.

A charged-particle source for generating a charged-particle comprises a sequence of electrodes, including an emitter electrode with an emitter surface, a counter electrode held at an electrostatic voltage with respect to the emitter electrode at a sign opposite to that of the electrically charged particles, and one or more adjustment electrodes surrounding the source space between the emitter electrode and the counter electrode. These electrodes have a basic overall rotational symmetry along a central axis, with the exception of one or more steering electrodes which is an electrode which interrupts the radial axial-symmetry of the electric potential of the source, for instance tilted or shifted to an eccentric position or orientation, configured to force unintended, secondary charged particles away from the emission surface.

The present invention relates to a sensor for electron detection emitted from an object to be used with a charged particle beam column being operated at a certain column and wafer voltage. The sensor is configured and operable to at least reduce interaction of negative ions with the active area of the sensor while minimizing electrons energy loss. The sensor is also configured and operable to minimize both gradual degradation of a cathodoluminescence efficiency of the active area and dynamic change of cathodoluminescence generated during operation of the sensor and evolving throughout the scintillator's lifetime.