H01J2237/0213

WIDE FIELD-OF-VIEW CHARGED PARTICLE FILTER
20210310348 · 2021-10-07 ·

An embodiment of a charged particle filter is described that comprises a plurality of magnets, each having a surface sloped at an angle relative to a plane defined by a line from a center of a field of view on a detector to the center of a field of view on a platform. In the described embodiment, the sloped surfaces are positioned to form a bore that comprises a magnetic field gradient that is strongest at a first aperture on a side of the bore proximate to the detector.

Apparatus for depositing metal films with plasma treatment

Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.

Vacuum chamber arrangement for charged particle beam generator

The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

Charged particle blocking element, exposure apparatus comprising such an element, and method for using such an exposure apparatus

The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.

MULTI-BEAM BLANKING DEVICE AND MULTI-CHARGED-PARTICLE-BEAM WRITING APPARATUS

In one embodiment, a multi-beam blanking device includes a semiconductor substrate, an insulating film that is disposed on the semiconductor substrate, an antistatic film that is disposed on the insulating film, a plurality of cells each of which is related to a through-hole that penetrate the semiconductor substrate and the insulating film and each of which includes a blanking electrode and a ground electrode that are disposed on the insulating film, and a ground wiring line that is disposed in the insulating film. The antistatic film and the ground wiring line are connected to each other at a joint that extends through the insulating film on the ground wiring line.

GERMANIUM TETRAFLOURIDE AND HYDROGEN MIXTURES FOR AN ION IMPLANTATION SYSTEM

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF.sub.4) and hydrogen (H.sub.2) gases to an ion implantation apparatus, so H.sub.2 is present in an amount in the range of 25%-67% (volume) N of the gas mixture, or the GeF.sub.4 and H.sub.2 are present in a volume ratio (GeF.sub.4:H.sub.2) in the range of 3:1 to 33:67. The use of the H.sub.2 gas in an amount in mixture or relative to the GeF.sub.4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge.sup.+ current gain and W.sup.+ peak reduction during an ion implantation procedure.

ELECTRON GUN, ELECTRON MICROSCOPE, THREE-DIMENSIONAL ADDITIVE MANUFACTURING APPARATUS, AND METHOD OF ADJUSTING CURRENT OF ELECTRON GUN

An electron gun includes a cathode that is heated to emit thermions; a cathode heating power supply that supplies a cathode heating current for heating the cathode; a grid that has a first aperture formed therein and that has a grid voltage applied thereto, the grid voltage having a potential lower than that of the cathode, wherein the grid converges the thermions passing through the first aperture by the grid voltage; an anode that has a second aperture formed therein and that has an anode voltage applied thereto, wherein the anode causes the thermions extracted from the cathode to pass through the second aperture as an electron beam by the anode voltage; an anode-voltage power supply that applies the anode voltage to the anode; and a controller that causes the anode voltage having a positive potential to be applied from the anode-voltage power supply to the anode.

Charged-particle beam apparatus, charged-particle beam writing apparatus, and charged-particle beam controlling method

A charged-particle beam apparatus is provided with a cathode to emit charged particle beams, an anode to propagate the charged particle beams emitted from the cathode in a sample surface direction, an aperture to propagate a charged particle beam passing through an opening at a predetermined position and of a predetermined shape, among the charged particle beams passing through the anode, in the sample surface direction, and a first electrode that is disposed between the anode and the aperture, and is set at a first electric potential of a polarity repelling a polarity of an ion generated due to collision of a charged particle beam.

SPRING-LOADED FASTENING SYSTEM FOR PROCESS CHAMBER LINERS
20210123470 · 2021-04-29 · ·

A spring-loaded fastening system for fastening a liner to a structure, including a spring-loaded fastener with a cleat defining an interior cavity, a spring element disposed on a floor of the interior cavity, and a shoulder bolt with head portion disposed on the spring element, with a shoulder portion of the shoulder bolt extending through a mounting aperture in a floor of the interior cavity and a threaded portion of the shoulder bolt fastened to the structure. The system further includes a hanger pocket in a rear surface of the liner including a first portion with an opening large enough to accommodate a diameter of a lower portion of the cleat and not large enough to accommodate a diameter of an upper portion of the cleat, and a second portion adjoining the first portion with an opening large enough to accommodate the diameter of the upper portion of the cleat.

HYDROGEN GENERATOR FOR AN ION IMPLANTER
20210090841 · 2021-03-25 ·

A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.