A liquid metal ion source (50) includes: a reservoir (10) configured to hold an ion material (M) forming a liquid metal; a needle electrode (20); an extraction electrode (22) configured to cause an ion of the ion material to be emitted from a distal end of the needle electrode; a beam diaphragm (24), which is arranged on a downstream side of the extraction electrode, and is configured to limit a beam diameter of the ion; and a vacuum chamber (30) configured to accommodate and hold the reservoir, the needle electrode, the extraction electrode, and the beam diaphragm in vacuum, wherein the liquid metal ion source further includes an oxidizing gas introducing portion (40), and wherein the oxidizing gas introducing portion communicates to the vacuum chamber, and is configured to introduce an oxidizing gas into a periphery of the needle electrode.

An ion source includes a vacuum chamber having a cooling mechanism, an ion generation container for reacting an ionized gas with an ion material so as to generate ions, an extraction electrode for extracting ions generated in the ion generation container and generating an ion beam, and a shielding member provided inside and in the vicinity of an inner wall of the vacuum chamber, and having a main body made of a conductive metal for blocking deposition of an insulating material on the inner wall (10d) of the vacuum chamber. The main body of the shielding member has a plurality of protruding support portions that is in contact with the inner wall of the vacuum chamber for supporting the main body in a manner such that the main body is fitted at a distance from the inner wall of the vacuum chamber.

A terminal system for an ion implantation system has an ion source with a housing and extraction electrode assembly having one or more aperture plates. A gas box is electrically coupled to the ion source. A gas source is within the gas box to provide a gas at substantially the same electrical potential as the ion source assembly. A bleed gas conduit introduces the gas to a region internal to the housing of the ion source and upstream of at least one of the aperture plates. The bleed gas conduit has one or more feed-throughs extending through a body of the ion source assembly, such as a hole in a mounting flange of the ion source. The mounting flange may be a tubular portion having a channel. The bleed gas conduit can further have a gas distribution apparatus defined as a gas distribution ring. The gas distribution ring can generally encircle the tubular portion of the mounting flange.

An ion source includes a vacuum chamber having a cooling mechanism, an ion generation container for reacting an ionized gas with an ion material so as to generate ions, an extraction electrode for extracting ions generated in the ion generation container and generating an ion beam, and a shielding member provided inside and in the vicinity of an inner wall of the vacuum chamber, and having a main body made of a conductive metal for blocking deposition of an insulating material on the inner wall (10d) of the vacuum chamber. The main body of the shielding member has a plurality of protruding support portions that is in contact with the inner wall of the vacuum chamber for supporting the main body in a manner such that the main body is fitted at a distance from the inner wall of the vacuum chamber.

A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.

Provided is a multi charged particle beam writing apparatus, including: an emission unit emitting a charged particle beam; a first aperture substrate having a plurality of first openings, the first aperture being irradiated with the charged particle beam, and the first aperture allowing a portion of the charged particle beam to pass through the plurality of first openings to form multiple beams; a second aperture substrate having a plurality of second openings through which each beam of the multiple beams passes and the second aperture substrate being capable of independently deflecting the each beam of the multiple beams; and a shielding plate provided so as to be insertable to a space between the first aperture substrate and the second aperture substrate and the shielding plate being capable of simultaneously shielding all the multiple beams.

An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a .sup.12C layer, the .sup.12C layer having an outer surface, facing the cavity.

An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a .sup.12C layer, the .sup.12C layer having an outer surface, facing the cavity.

An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a .sup.12C layer, the .sup.12C layer having a first thickness, ranging between 1 mm to 5 mm.

Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.