Techniques for high throughput electron channeling contrast imaging (ECCI) by varying electron beam energy are provided. In one aspect, a method for ECCI of a crystalline wafer includes: placing the crystalline wafer under an electron microscope having an angle of less than 90 relative to a surface of the crystalline wafer; generating an electron beam, by the electron microscope, incident on the crystalline wafer; varying an accelerating voltage of the electron microscope to access a channeling condition of the crystalline wafer; and obtaining an image of the crystalline wafer. A system for ECCI is also provided.

Provided herein are portable ultraviolet (UV) devices, systems, and methods of use and manufacturing same. Methods of use include methods for UV disinfection and sterilization, more specifically, methods for UV disinfection and sterilization of a container, a room, a space or a defined environment. The portable UV devices, systems and methods are particularly useful for the UV disinfection and sterilization of a container, a room, a space or defined environment used in various industries. Provided are also portable UV devices, systems, and methods for inhibiting the growth of one or more species of microorganisms present in a container, a room, a space or a defined environment, preferably for inhibiting the growth of one or more species of microorganisms present on an interior surface of a container, a room, a space or a defined environment.

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Systems and methods of sample preparation using dual ion beam trenching are described. In an example, an inside of a semiconductor package is non-destructively imaged to determine a region of interest (ROI). A mask is positioned over the semiconductor package, and a mask window is aligned with the ROI. A first ion beam and a second ion beam are swept, simultaneously or sequentially, along an edge of the mask window to trench the semiconductor package and to expose the ROI for analysis.

A vacuum condition processing apparatus is provided, the top of which is connected to an external charged particle beam generating device, and the apparatus includes: a suction cup in contact with the specimen to be observed or the stage holding the specimen, a first gas controlling device connected to an external gas supplying system, and a second gas controlling device connected to an external pumping system; a window is deployed at the top of the apparatus, through which the particle beam can go into the apparatus; the first gas controlling device is arranged to connect the gas supplying system and the suction cup; the second gas controlling device is arranged to connect the gas pumping system and the suction cup. Also disclosed is a specimen observation system and method.

Techniques for high throughput electron channeling contrast imaging (ECCI) by varying electron beam energy are provided. In one aspect, a method for ECCI of a crystalline wafer includes: placing the crystalline wafer under an electron microscope having an angle of less than 90 relative to a surface of the crystalline wafer; generating an electron beam, by the electron microscope, incident on the crystalline wafer; varying an accelerating voltage of the electron microscope to access a channeling condition of the crystalline wafer; and obtaining an image of the crystalline wafer. A system for ECCI is also provided.

The invention relates to a substrate exposure system comprising a frame, a substrate support module for carrying a substrate, an exposure apparatus for exposing said substrate, and adjustment assembly for adjusting the position of the exposure apparatus with respect to the substrate support module. The adjustment assembly comprises a hydraulic actuator, a hydraulic generator and a conduit, wherein the conduit interconnects said hydraulic actuator and said hydraulic generator for forming a hydraulic system. The exposure apparatus, the frame, the adjustment assembly and the substrate support module are arranged as parts of a series of mechanically linked components. A first part of said series of mechanically linked components comprises the exposure apparatus, and a second part comprises the substrate support module. Said hydraulic actuator is arranged between said first part and said second part. Preferably the hydraulic actuator comprises a first bellows and the hydraulic generator comprises a second bellows.

Provided are new techniques for fault analysis in IC semiconductor devices, including system designs and methods to enable the probing of circuitry within an IC device under test (DUT) using electron beam (e-beam) techniques while the DUT is being stimulated electrically, or while the device is active on its own or within a host system mounted in a circuit board or other module. The DUT could be a packaged IC, or an IC in some unpackaged form. To create a local evacuated volume immediately outside the e-beam tool, a sealing element is sealed against or around the DUT for a localized seal. Such an arrangement obviates the need for vacuum feedthroughs of possibly thousands of signals required to operate and monitor the DUT, and further enables probing of a DUT while it is operating in its normal environment, such as installed on a circuit board in its system, or on a tester.

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Provided is a mirror device including a mirror which is supported to be flappable around a fast axis and supported to be flappable around a slow axis and in which a resonance frequency of flapping thereof with respect to the fast axis is a first value and a resonance frequency of the flapping thereof with respect to the slow axis is a second value lower than the first value; a signal extracting portion configured to obtain from a slow axis coil a synthesized signal including an induced signal generated in the slow axis coil due to an operation of flapping the mirror around the fast axis and configured to extract the induced signal from the synthesized signal; and a signal generating portion configured to generates a driving signal so that the flapping of the mirror with respect to the fast axis is in a resonance state according to the induced signal.