Disclosed herein is an apparatus comprising: a first electrically conductive layer, a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the eclectically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber during processing of a substrate. A substrate support includes a plurality of substrate support pins wherein the radio frequency voltage, current and phase of each of the plurality of substrate support pins are measured and impedances of the support pins are adjusted in real time. Each of the substrate support pins is coupled to an associated adjustable impedance circuit that may be remotely controlled. In one embodiment a variable capacitor is used to adjust the impedance of the impedance circuit coupled to the associated substrate support pin and may be remotely adjusted with a stepper motor. In another embodiment a microcontroller may control the impedance adjustments for all of the plurality of substrate support pins and may be used to track these impedances with each other and with a bulk impedance of the plasma processing chamber.

The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

The present inventive concept relates to a substrate processing apparatus and a gas distribution apparatus for substrate processing apparatuses including: a plasma generator generating plasma for performing a processing process on a substrate supported by a substrate supporting unit; a ground body coupled to the plasma generator; and a plasma shield shielding the plasma generated by the plasma generator, wherein the plasma generator includes a first electrode for generating the plasma and a second electrode coupled to the ground body at a position spaced apart from the first electrode so that a gas distribution space for distributing a process gas is provided between the first electrode and the second electrode, and the plasma shield shields the plasma, generated by the plasma generator, in at least one of a top of the substrate and a bottom of the substrate.

There is provided an ion milling apparatus and sample holder permitting one to observe a sample, which has been milled, with an electron microscope without transferring the sample to a different holding member. The ion milling apparatus has an ion source, a sample holder, and a sample stage. The sample holder includes: a holder body having a sample holding portion for holding the sample; and a cover member detachably mounted to the holder body and hermetically sealing the sample held on the sample holding portion. The holder body has a shield plate and a field-correcting plate for correcting electric fields around the sample held on the sample holding portion.

A charged particle beam device that can improve machining position precision in section processing using a shielding plate is provided. The invention is directed to a charged particle beam device including: an ion source (101); a sample stand (106) on which a sample (107) is mounted; a shielding plate (108) placed so that a portion of the sample (107) is exposed when seen from the ion source (101); and tilt units (123, 124) that tilt the sample (107) and the shielding plate (108) relative to the irradiation direction of an ion beam (102) from the ion source (101) to the sample (107).

The present disclosure relates to a stage apparatus comprising: an object table configured to hold a substrate, the object table comprising an electrode configured to be charged by a power source and an electrical connection configured to electrically connect the electrode to the power source, and an electric field shield configured to shield at least a part of the electrical connection.

To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

In one embodiment, an aperture set for multi-beam includes a shaping aperture array in which a plurality of first openings are formed, and which forms a multi-beam by allowing part of a charged particle beam to pass through corresponding ones of the plurality of first openings, a blanking aperture array in which a plurality of second openings are formed, the plurality of second openings each including a pair of blanking electrodes that perform blanking deflection of a beam, and an electric field shield plate that is disposed to be opposed to the blanking aperture array and includes a plurality of third openings. The electric field shield plate has a substrate, and a high resistance film provided on a surface of the substrate, the surface being opposed to the blanking aperture array, and the high resistance film has a higher electrical resistance value than an electrical resistance value of the substrate.

An object of the present invention is to provide a charged particle beam device that suppresses the influence of an external electromagnetic wave, even when a shielding member, such as a vacuum valve, is in the open state. To achieve the above object, a charged particle beam device including a vacuum chamber (111) having an opening (104) that surrounds a sample delivery path is proposed. The charged particle beam device includes a conductive material (118) surrounding the opening (104) for conduction between the vacuum chamber (111) and a conductive member (106) disposed on the atmosphere side. According to an embodiment of the present invention, it is possible to restrict an electromagnetic wave (117) from reaching the sample chamber via the delivery path.