A processing chamber includes an upper surface and a showerhead arranged to supply gases through the upper surface into the processing chamber. At least a portion of the showerhead extends above the upper surface of the processing chamber. A shroud enclosure is arranged on the upper surface of the processing chamber. The shroud enclosure is arranged around the portion of the showerhead extending above the upper surface of the processing chamber and is configured to isolate radio frequency interference generated by the showerhead.

A temperature sensor includes: a thermocouple having a temperature measurement contact in a processing container in which a plasma processing is performed, and configured to measure a temperature inside the processing container; a protective tube configured to accommodate and protect the thermocouple; and an electromagnetic shield provided in the protective tube to cover the thermocouple.

An e-beam inspection tool is disclosed, the tool comprising, an electron optics system configured to generate an electron beam, an object table configured to hold a specimen, a positioning device configured to position the object table, the positioning device comprising an actuator, wherein the positioning device further comprises a heating device configured to generate a heat load and a heat load controller to control the generated heat load at least partly based on an actuator heat load generated in the actuator.

The present disclosure relates to an elementary device for producing a plasma. The elementary device includes a coaxial applicator of microwave power that includes a conductive central core, a conductive external shield surrounding the central core, a medium located between the central core and the shield to propagate microwave energy, and an insulating body. The elementary device further includes a system to couple to a microwave generator and is disposed at the shield. The shield has a proximal end plugged with the insulating body made of dielectric material that is transparent to the microwave energy. The insulating body has an external surface configured to contact and excite a gas located in the interior of a chamber. The insulating body extends exterior wise from the shield and its external surface is nonplanar and protrudes from the shield. The outside diameter of the body decreases from the shield to its tip.

There is provided a technique that includes: a process chamber in which a substrate is processed; a gas supply system configured to supply a processing gas into the process chamber; a first plasma generator installed to be wound around an outer periphery of the process chamber and configured to generate plasma from the processing gas in the process chamber; and a second plasma generator installed at an upper portion of the process chamber to protrude toward an inside of the process chamber and configured to generate plasma from the processing gas in the process chamber.

Embodiments described herein relate to apparatus for radio frequency (RF) grounding in process chambers. In one embodiment, a heater is disposed in a substrate support. The heater is surrounded by a ground shield assembly. The substrate support also includes a multi-zone electrode disposed therein. The multi-zone electrode includes one or more portions of an electrode disposed in a plane. One or more portions of a multi-zone ground plane are interposed with the one or more portions of the electrode. That is, the multi-zone ground plane and the multi-zone electrode are coplanar with the one or more portions of the electrode alternating with one or more portions of the multi-zone ground plane throughout a plane of the substrate support.

A wafer support of the present invention includes shield sheet embedded in the ceramic base between the plasma generation electrode and the heater electrode in a state not contacting both the electrodes; and a shield pipe electrically connected to the shield sheet and laid to extend to outside of the ceramic base from the surface of the ceramic base on the side opposite to the wafer placement surface, wherein the wiring member for the plasma generation electrode is inserted through inside of the shield pipe in a state not contacting the shield pipe, and the wiring member for the heater electrode is disposed outside the shield pipe in a state not contacting the shield pipe.

The present disclosure provides a lower electrode mechanism and a reaction chamber, the lower electrode mechanism includes a base for carrying a workpiece to be processed and a lower electrode chamber disposed under the base, the lower electrode chamber includes an electromagnetic shielding space and a non-electromagnetic shielding space isolated from each other, the chamber of the lower electrode chamber includes a first through hole and a second through hole, and the electromagnetic shielding space and the non-electromagnetic shielding space are respectively connected to outside through the first through hole and the second through hole to prevent a plurality of first components disposed in the electromagnetic shielding space from being interfered by a second component disposed in the non-electromagnetic shielding space.

The present invention provides a charged particle beam apparatus capable of efficiently reducing the effect of a residual magnetic field when SEM observation is performed. The charged particle beam apparatus according to the present invention includes a first mode for passing a direct current to a second coil after turning off a first coil, and a second mode for passing an alternating current to the second coil after turning off the first coil.

The present invention realizes a composite charged particle beam apparatus capable of suppressing a leakage magnetic field from a pole piece forming an objective lens of an SEM with a simple structure. The charged particle beam apparatus according to the present invention obtains an ion beam observation image while passing a current to a first coil constituting the objective lens, and performs an operation of reducing the image shift by passing a current to a second coil with a plurality of current values, and determines a current to be passed to the second coil based on a difference between the operations.