H01J2237/0266

ELECTRON BEAM INSPECTION TOOL AND METHOD OF CONTROLLING HEAT LOAD

An e-beam inspection tool is disclosed, the tool comprising, an electron optics system configured to generate an electron beam, an object table configured to hold a specimen, a positioning device configured to position the object table, the positioning device comprising an actuator, wherein the positioning device further comprises a heating device configured to generate a heat load and a heat load controller to control the generated heat load at least partly based on an actuator heat load generated in the actuator.

PLASMA PROCESSING APPARATUS
20240071730 · 2024-02-29 ·

A plasma processing apparatus includes a chamber having a sidewall and providing a processing space; a substrate support provided in the processing space; a first electrode provided above the processing space; a second electrode provided above the processing space and below the first electrode, wherein the second electrode is configured to provide a plasma generation space between the first electrode and the second electrode and provides a plurality of through holes that guide active species into the processing space; an inlet portion configured to introduce electromagnetic waves into the plasma generation space; and a choke configured to suppress emission of electromagnetic waves to the processing space via the plurality of through holes. The choke includes a dielectric member in contact with a bottom surface of a peripheral edge portion of the second electrode. The dielectric member protrudes inside the chamber.

Sample holder and electron microscope

A sample holder capable of limiting X-rays accepted into an X-ray detector is provided. The sample holder is for use in an electron microscope equipped with a polepiece assembly and a semiconductor detector. The sample holder includes: a sample stage on which a sample is held; and a shield plate. When the sample stage has been introduced in the sample chamber of the electron microscope, the shield plate is located between the polepiece assembly and the semiconductor detector.

CERAMIC LINER WITH INTEGRATED FARADAY SHIELDING
20190341230 · 2019-11-07 ·

A plasma processing system for processing a semiconductor substrate, the system including a plasma processing chamber having a substrate support member configured for receiving a semiconductor substrate within the plasma processing chamber; a process gas delivery system configured to deliver process gas to the plasma processing chamber; a power source configured to energize process gas within the plasma processing chamber to create plasma; and a component positioned between the power source and the substrate support member, the component including a ceramic liner and a Faraday shield in contact with a surface of the ceramic liner.

Ferrite cage RF isolator for power circuitry

RF isolation for power circuitry includes one or more ferrite cages surrounding a pair of coils, one coil connected to power input, and the other coil connected to a load such as a heater. The ferrite cage provides universal isolation for the coils, avoiding the necessity of specially tuned filters or more complicated coil arrangements. A pair of dielectric discs support respective coils. In one aspect, the ferrite cage is constituted by ferrite pieces which fan out from a central portion of the dielectric discs and are connected at an outer periphery of the dielectric discs, and at the central portion of the dielectric discs. In one aspect, the fanned-out ferrite pieces comprises either manganese-zinc or magnesium-zinc ferrites, and the ferrite pieces connecting the fanned-out ferrite pieces comprise nickel-zinc ferrites.

Ferrite Cage RF Isolator For Power Circuitry

RF isolation for power circuitry includes one or more ferrite cages surrounding a pair of coils, one coil connected to power input, and the other coil connected to a load such as a heater. The ferrite cage provides universal isolation for the coils, avoiding the necessity of specially tuned filters or more complicated coil arrangements. A pair of dielectric discs support respective coils. In one aspect, the ferrite cage is constituted by ferrite pieces which fan out from a central portion of the dielectric discs and are connected at an outer periphery of the dielectric discs, and at the central portion of the dielectric discs. In one aspect, the fanned-out ferrite pieces comprises either manganese-zinc or magnesium-zinc ferrites, and the ferrite pieces connecting the fanned-out ferrite pieces comprise nickel-zinc ferrites.

Radio frequency screen for an ultraviolet lamp system

A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.

Integrated electrode and ground plane for a substrate support
12020912 · 2024-06-25 ·

Embodiments described herein relate to apparatus for radio frequency (RF) grounding in process chambers. In one embodiment, a heater is disposed in a substrate support. The heater is surrounded by a ground shield assembly. The substrate support also includes a multi-zone electrode disposed therein. The multi-zone electrode includes one or more portions of an electrode disposed in a plane. One or more portions of a multi-zone ground plane are interposed with the one or more portions of the electrode. That is, the multi-zone ground plane and the multi-zone electrode are coplanar with the one or more portions of the electrode alternating with one or more portions of the multi-zone ground plane throughout a plane of the substrate support.

PLASMA PROCESSING APPARATUS

Provided is a plasma processing apparatus for controlling a distribution of plasma at an edge region of a chamber during a plasma process, thereby reliably performing the plasma process on a semiconductor substrate. The plasma processing apparatus includes a chamber including an outer wall defining a reaction space and a window covering an upper portion of the outer wall; a coil antenna positioned above the window and including at least two coils; and an electrostatic chuck (ESC) positioned in a lower portion of the chamber, wherein an electrode is located inside the ESC, wherein the electrode includes a first electrode for chucking and at least one second electrode, the at least one second electrode provided at an edge of the inside of the ESC so as to have a tilt with respect to the top surface of the ESC.