An electron beam inspection device includes: a primary electron optical system that irradiates the surface of a sample with an electron beam; and a secondary electron optical system that gathers secondary electrons emitted from the sample and forms an image on the sensor surface of a detector. An electron image of the surface of the sample is obtained from a signal detected by the detector, and the sample is inspected. A cylindrical member that is formed with conductors stacked as an inner layer and an outer layer, and an insulator stacked as an intermediate layer is provided inside a lens tube into which the secondary electron optical system is incorporated. An electron orbital path is formed inside the cylindrical member, and the members constituting the secondary electron optical system are arranged outside the cylindrical member.

There is provided a liner tube capable of reducing the effects of magnetic field variations on an electron beam. The liner tube (10) is disposed inside the electron optical column (2) of an electron microscope (100). The interior of the tube (10) forms a path for the electron beam (EB). The liner tube (10) has a first cylindrical member (110) that is made of copper, gold, silver, or an alloy consisting principally of one of these metals.

There is provided a liner tube capable of reducing the effects of magnetic field variations on an electron beam. The liner tube (10) is disposed inside the electron optical column (2) of an electron microscope (100). The interior of the tube (10) forms a path for the electron beam (EB). The liner tube (10) has a first cylindrical member (110) that is made of copper, gold, silver, or an alloy consisting principally of one of these metals.

The present disclosure relates to an integrated chip processing tool. The integrated chip processing tool includes a gas distribution ring configured to extend along a perimeter of a process chamber. The gas distribution ring includes a lower ring extending around the process chamber. The lower ring has a plurality of gas inlets arranged along a bottom surface of the lower ring and a plurality of gas conveyance channels arranged along an upper surface of the lower ring directly over the plurality of gas inlets. The gas distribution ring further includes an upper ring disposed on the upper surface of the lower ring and covering the plurality of gas conveyance channels. A plurality of gas outlets are arranged along opposing ends of the plurality of gas conveyance channels. A plurality of gas conveyance paths extending between the plurality of gas inlets and the plurality of gas outlets have approximately equal lengths.

The charged particle beam device comprises: an electron gun for generating an electron beam; an imaging lens system for imaging the electron beam that has passed through a sample; a splitting portion where the electron beam that has passed through the imaging lens system is split into a first image component and a second image component; a first image detection unit for detecting the first image component and outputting a first image; a second image detection unit for detecting the second image component and outputting a second image; a processing unit; and display units. The magnification for the second image is greater than the magnification for the first image. The processing unit generates a third image by combining the first image and the second image, and the display units display the second image and the third image.

An electron beam inspection device includes: a primary electron optical system that irradiates the surface of a sample with an electron beam; and a secondary electron optical system that gathers secondary electrons emitted from the sample and forms an image on the sensor surface of a detector. An electron image of the surface of the sample is obtained from a signal detected by the detector, and the sample is inspected. A cylindrical member that is formed with conductors stacked as an inner layer and an outer layer, and an insulator stacked as an intermediate layer is provided inside a lens tube into which the secondary electron optical system is incorporated. An electron orbital path is formed inside the cylindrical member, and the members constituting the secondary electron optical system are arranged outside the cylindrical member.

The purpose of the present invention is to provide a charged particle beam device that exhibits high performance due to the use of vanadium glass coatings, and to provide a method of manufacturing a component for a charged particle beam device. Specifically provided is a charged particle beam device using a vacuum component characterized by comprising a metal container, the interior space of which is evacuated to form a high vacuum, and coating layers formed on the surface on the interior space-side of the metal container, wherein the coating layers are vanadium-containing glass, which is to say an amorphous substance. Coating vanadium glass onto walls of a space where it is desirable to form a high vacuum, for example walls in the vicinity of an electron source, reduces gas discharge in the vicinity of the electron source, and the getter effect of the coating layer induces localized evacuation and enables the formation of an extremely high vacuum, even in spaces having a complex structure, without providing a large high-vacuum pump.

The present disclosure relates to an integrated chip processing tool. The integrated chip processing tool includes a gas distribution ring configured to extend along a perimeter of a process chamber. The gas distribution ring includes a lower ring extending around the process chamber. The lower ring has a plurality of gas inlets arranged along a bottom surface of the lower ring and a plurality of gas conveyance channels arranged along an upper surface of the lower ring directly over the plurality of gas inlets. The gas distribution ring further includes an upper ring disposed on the upper surface of the lower ring and covering the plurality of gas conveyance channels. A plurality of gas outlets are arranged along opposing ends of the plurality of gas conveyance channels. A plurality of gas conveyance paths extending between the plurality of gas inlets and the plurality of gas outlets have approximately equal lengths.

The embodiments disclosed herein are directed to systems, methods, and devices for processing a material using a microwave plasma apparatus with an interior liner. In some embodiments, the liner comprises a reduction resistant material layer in direct contact with a hydrogen-containing plasma of a plasma processing apparatus. In some embodiments, the liner may comprise a sleeve disposed between a plasma and one or more concentric tubes of a plasma processing apparatus. In some embodiments, the liner may comprise a coating of material applied to the one or more concentric tubes. In some embodiments, the liner may comprise a flexible ceramic material, such as a ceramic ribbon that is coiled or wrapped in a helix shape spiraling around the interior of the one or more concentric tubes.

An ion source chamber for ion implantation system includes a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode to ionize gas molecules injected into an interior of the housing; a liner section defining one or more interior walls of the housing interior, wherein each liner section includes a interiorly facing surface exposed to the ionization region during operation the ion implantation system; a cathode shield disposed about the cathode; a repeller spaced apart from the cathode; a plate including a source aperture for discharging ions from the ion source chamber; wherein at least one of the repeller, the liner section, the cathode shield; the plate, or an insert in the plate defining the source aperture comprise silicon carbide, wherein the silicon carbide is a non-stoichiometric sintered material having excess carbon.