A multiple charged particle beam writing apparatus includes a circuitry to calculate, for each of the plurality of combinations, a first distribution coefficient for each of the three beams configuring the combination concerned, for distributing a dose to irradiate the design grid concerned to the three beams such that the gravity center position of each distributed dose coincides with the position of the design grid concerned and the sum of the each distributed dose coincides with the dose to irradiate the design grid concerned; and a circuitry to calculate, for each of the four or more beams, a second distribution coefficient of each of the four or more beams relating to the design grid concerned by dividing the total value of at least one first distribution coefficient corresponding to the beam concerned in the four or more beams by the number of the plurality of combinations.

An aperture system of an electron beam apparatus includes a plurality of apertures each including a first area including at least one through hole allowing an electron beam to pass therethrough and a second area disposed outside the first area and including first and second alignment keys, wherein two apertures, among the plurality of apertures, include the first alignment keys arranged in mutually overlapping positions and having the same size, and an aperture, excluding the two apertures, among the plurality of apertures, includes the second alignment keys arranged to overlap the first alignment keys and having an area larger than an area of the first alignment keys.

Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.

The present disclosure provides a charged particle beam device. The charged particle beam device includes a charged particle source configured to emit a charged particle beam, a condenser lens arrangement, an aperture arrangement configured to generate two or more beamlets of the charged particle beam, wherein the aperture arrangement includes a plurality of first openings and a plurality of second openings different from the plurality of second openings, and a multipole arrangement configured to act on the two or more beamlets. The aperture arrangement is configured to align the plurality of first openings or the plurality of second openings with the multipole arrangement.

A multiple charged particle beam writing apparatus includes a circuitry to calculate, for each of the plurality of combinations, a first distribution coefficient for each of the three beams configuring the combination concerned, for distributing a dose to irradiate the design grid concerned to the three beams such that the gravity center position of each distributed dose coincides with the position of the design grid concerned and the sum of the each distributed dose coincides with the dose to irradiate the design grid concerned; and a circuitry to calculate, for each of the four or more beams, a second distribution coefficient of each of the four or more beams relating to the design grid concerned by dividing the total value of at least one first distribution coefficient corresponding to the beam concerned in the four or more beams by the number of the plurality of combinations.

Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

A method includes operating a multiple particle beam system at different working points. The numerical aperture can be set for each of the working points in such a way that the resolution of the multiple particle beam system is optimal. In the process, the beam pitch between adjacent individual particle beams on the sample to be scanned is kept constant as a boundary condition. There are no mechanical reconfigurations of the system whatsoever for the purposes of varying the numerical aperture.

Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

The focused ion beam apparatus includes: a vacuum container; an emitter tip disposed in the vacuum container and having a pointed front end; a gas field ion source; a focusing lens; a first deflector; a first aperture; an objective lens focusing the ion beam passing through the first deflector; and a sample stage. A signal generator responding to the ion beam in a point-shaped area is formed between the sample stage and an optical system including at least the focusing lens, the first aperture, the first deflector, and the objective lens, and a scanning field ion microscope image of the emitter tip is produced by matching a signal output from the signal generator and scanning of the ion beam by the first deflector with each other.