An apparatus for a transmission electron microscope includes a housing configured to be attached to the transmission electron microscope; a plunger received in the housing and movable relative to the housing; a first set of pieces coupled to the plunger, the first piece being configured to move relative to the housing in response to the plunger moving relative to the housing; and a second set of pieces positioned in a fixed spatial relationship relative to each other, the second set of pieces and the first set of pieces forming a perimeter of an opening, an extent of the opening being continuously variable by moving the first set of piece relative to the second set of pieces.

A method includes operating a multiple particle beam system at different working points. The numerical aperture can be set for each of the working points in such a way that the resolution of the multiple particle beam system is optimal. In the process, the beam pitch between adjacent individual particle beams on the sample to be scanned is kept constant as a boundary condition. There are no mechanical reconfigurations of the system whatsoever for the purposes of varying the numerical aperture.

An imaging system for directing a flux of charged particles transmitted through a specimen onto a spectroscopic apparatus, wherein the flux is dispersed by a dispersing device into an energy-resolved array of spectral sub-beams propagating substantially parallel to a propagation axis. An adjustable aperture device defines an aperture in a path of the array so as to select a subset of the array to be admitted to a detector, which aperture is delimited in a dispersion direction perpendicular to the propagation axis to allow independent adjustment of both of: a width of the aperture parallel to the dispersion direction; and a position of a center of the aperture relative to the propagation axis.

To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.

Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

A multi-beam generating unit of a multi-beam charged particle imaging system can exhibit reduced sensitivity to drift and extended lifetime. Drifts due to x-ray irradiation and thermal loads can be minimized by a combination of at least one of a shielding element, a cooling member, or an architecture and method for operating an active multi-aperture element. A lifetime can be improved by annealing methods of an active multi-aperture element or a microelectronic device forming for example a voltage supply unit.

An ion source is disclosed, in which the compression force applied to the faceplate on the two sides of the extraction aperture may be varied independently. Modifying the compression force between the faceplate and arc chamber can enable temperature control of the ion source by modifying the thermal contact resistance between the two components. This may allow more control of the temperature of the faceplate, and more specifically, the temperature profile across the entire faceplate due to precise control of the thermal contact gradient along the length of the faceplate. The ion implantation system includes two adjustable tension systems, each of which includes an actuator. A controller is used to provide a command signal to each adjustable tension system. In some embodiments, a feedback signal is generated by each adjustable tension system, which is representative of the torque or force experienced by the actuator.

A charged particle beam device wherein a transmission image corresponding to an arbitrary diffraction spot or a diffraction pattern corresponding to a partial range in the transmission image are easily and automatically captured. A charged particle beam device having: an image-capturing unit for forming an image of a sample; a diaphragm disposed in the image-capturing unit, a plurality of openings having different sizes for transmitting an electron beam from the sample being formed in the diaphragm; a movement unit for varying the position of the diaphragm; and a display unit for displaying the formed image, wherein when the operator selects, e.g., a diffraction spot (A) on the display unit, the movement unit moves the diaphragm from the positional relationship between the diaphragm and the image in accordance with the position of the diffraction spot (A).

A semiconductor manufacturing device includes an electron beam source emitting; a plurality of condenser lenses disposed between a stage on which an object including structures is seated and the electron beam source; an objective lens disposed between the plurality of condenser lenses and the stage; an aperture disposed between the plurality of condenser lenses; and a controller configured to acquire a plurality of original images according to a working distance between the objective lens and the object, acquire a pattern image indicating the structures from the plurality of original images, a plurality of kernel images indicating distribution of an electron beam on the object, and a plurality of position vectors indicating a relative position of the structures in the plurality of kernel images, and adjust a position of the aperture based on a motion vector indicating movement of the plurality of position vectors according to the working distance.

Systems and methods of enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged-particle detector in a multi-beam apparatus are disclosed. The multi-beam apparatus may comprise an electro-optical system comprising a beam-limit aperture plate having a surface substantially perpendicular to an optical axis, the beam-limit aperture plate comprising a first aperture at a first distance relative to the surface of the beam-limit aperture plate, and a second aperture at a second distance relative to the surface of the beam-limit aperture plate, the second distance being different from the first distance. The first aperture may be a part of a first set of apertures of the beam-limit aperture plate at the first distance, and the second aperture may be a part of a second set of apertures of the beam-limit aperture plate at the second distance.