The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.

Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.

The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.

The present disclosure relates to a collimator. The collimator may include a motor, a transmission unit having a first end and a second end, and a leaf unit having a leaf. The first end of the transmission unit may be connected to the motor and the second end of the transmission unit may be connected to the leaf. The present disclosure also relates to a collimator system. The collimator system may include a leaf module having a leaf, a driving module having a motor configured to drive the leaf, and a processing module to generate a movement profile of the leaf. The movement profile of the leaf may include a first speed during a first stage, a second speed of the leaf during a second stage, and a third speed of the leaf during a third stage.

The invention comprises an alignment guide apparatus and a method of use thereof for aligning an imaging beam, longitudinally passing through an exit nozzle of an imaging system, to an imaging zone of a sample, includes the steps of: (1) providing an alignment guide, the alignment guide comprising: (a) a guide wall at least partially circumferentially enclosing an aperture, (b) a first laser element connected to the guide wall, and (c) a second laser element connected to the guide wall; (2) inserting the exit nozzle of the imaging system into the aperture; (3) projecting a first line from the first laser element onto the sample; (4) projecting a second line from the second laser element onto the sample; and (5) moving the sample relative to the exit nozzle of the imaging system to position an intersection of the first line and the second line at the imaging zone to align the imaging beam to the imaging zone.

A semiconductor wafer includes a first surface and an implantation area adjacent to the first surface and a certain distance away from the first surface, the implantation area including implanted particles and defects. A defect concentration in the implantation area deviates by less than 5% from a maximum defect concentration in the implantation area.

An energy filter assembly (1, 100, 200, 300) for ion implantation system is provided comprising an energy filter (25), a first filter frame (40), and at least one coupling element (50). The energy filter (25) has at least one filter element (25a) absorbing the beam energy of an ion beam (10). The at least one coupling element (50) elastically connects the first filter frame (40) with the energy filter (25).

The present disclosure relates to a collimator. The collimator may include a motor, a transmission unit having a first end and a second end, and a leaf unit having a leaf. The first end of the transmission unit may be connected to the motor and the second end of the transmission unit may be connected to the leaf. The present disclosure also relates to a collimator system. The collimator system may include a leaf module having a leaf, a driving module having a motor configured to drive the leaf, and a processing module to generate a movement profile of the leaf. The movement profile of the leaf may include a first speed during a first stage, a second speed of the leaf during a second stage, and a third speed of the leaf during a third stage.

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.