Provided is a plasma processing apparatus. The plasma processing apparatus includes a chamber where a wafer is configured to be mounted, a source power configured to provide a source voltage to generate a plasma in the chamber, a multi-level pulse circuit configured to generate a wafer voltage to accelerate ions in the plasma, and generate a pulse signal including a first pulse voltage, a second pulse voltage having a level lower than the first pulse voltage, and a third pulse voltage different from the first and second pulse voltages and having a level higher than the second pulse voltage, which are sequentially output, and an arbitrary voltage compensation circuit configured to provide a compensation voltage non-linearly changed to at least one of the first to third pulse voltages.

A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.

A method, a system and computer program product for controlling exposure of a substrate positioned on a platen in an ion implantation system to an ion beam. A first current value determined based on a powering potential powering an ion source is received. A second current value determined based on an accelerating potential or a decelerating potential supplied to the ion implantation apparatus and affecting generation of the ion beam by the ion source for application to a substrate positioned on a platen is received. One or more energy filter supply current values are determined based on one or more energy filter supply potentials supplied to an energy filter positioned in the path of the ion beam. Platen position values are generated based on the first and second current values and energy filter supply current values. A position of the platen is adjusted using platen position values.

A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.

A substrate processing apparatus includes an upper chamber including an ion source generator, a grid system overlapping the ion source generator in a vertical direction and configured to extract and accelerate an ion source generated by the ion source generator, and a lower chamber, wherein the lower chamber includes, therein, a support configured to support a substrate, a plurality of reflectors arranged in the vertical direction above the support, and a switch configured to switch each of the plurality of reflectors between an on-state and an off-state.

An ion implantation system has a first linear accelerator for accelerating ions of an ion beam to a first energy along a beam path. A second linear accelerator positioned downstream of the first linear accelerator along the beam path accelerates the ions to a second energy. A charge stripper is positioned between the first and second linear accelerators and is at ground potential. A gas source enclosure selectively encloses a plurality of stripper gas containers in an enclosure environment at ground potential. Each of the plurality of stripper gas containers contains a respective stripper gas. A flow control apparatus can have one or more valves, mass flow controllers, and conduits that selectively fluidly couples each of the plurality of stripper gas containers to the charge stripper and that selectively controls a flow of each respective stripper gas to the charge stripper.

A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.

A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.

An ion implantation system has an ion source configured to form an ion beam along a beam path. An accelerator is downstream of the ion source and configured to accelerate the ion beam to a predetermined energy. An energy filter is downstream of the accelerator and has an entrance configured to accept the ion beam. A beam measurement device can be positioned downstream of the accelerator along the beam path and is configured to determine an angular orientation of the ion beam. A controller further controls one or more of the accelerator and final energy filter based on the angular orientation of the ion beam with respect to the entrance of the energy filter. The controller can control beam parameters of an energy filter formula based on the angular orientation of the ion beam, where the energy filter formula is based on a characterization of the energy filter.

A method and system for depositing a transition nitride film including depositing the film on a substrate using plasma enhanced atomic layer deposition and using a number of deposition cycles in an atmosphere comprising no hydrogen or less than 1% hydrogen. A film and device comprising the transition metal nitride is further disclosed.