A compact two-dimensional (2D) scanning magnet for scanning ion beams is provided. The compact 2D scanning magnet may include a vertical field trapezoidal coil and a horizontal field trapezoidal coil that is disposed proximate to the vertical field trapezoidal coil and is rotated about an axis relative to the vertical field trapezoidal coil. The vertical field trapezoidal coil may include a top coil that is configured to receive a first input electrical current flowing in a first direction, and a bottom coil that is configured to receive a second input electrical current flowing in the first direction. The horizontal field trapezoidal coil may include a left coil that is configured to receive a third input electrical current flowing in a second direction, and a right coil that is configured to receive a fourth input electrical current flowing in the second direction.

A GCIB apparatus that can change the energy of ions to be irradiated onto a substrate without changing the electrode arrangement of the GCIB apparatus that have an extraction electrode arrangement optimized for a specific voltage or a permanent magnet type magnet that effectively removes singly charged monomer ions at that voltage, or the magnetic field strength of the permanent magnet type magnet. A separated high voltage power supply that generates a positive or negative high voltage in addition to the first high voltage power supply, the second high voltage power supply and the third high voltage power supply, and a separated high voltage application circuit that applies a positive or a negative separated high voltage supplied from the separated high voltage power supply to the ground electrode of the extraction electrode and the ground electrode portions of the one or more electrostatic lenses.

A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.

An ion implantation system has a first linear accelerator for accelerating ions of an ion beam to a first energy along a beam path. A second linear accelerator positioned downstream of the first linear accelerator along the beam path accelerates the ions to a second energy. A charge stripper has a stripper tube with a passageway positioned between the first and second linear accelerators. A charge stripping medium is provided in the passageway to strip at least one electron from the ions as the ion beam passes through the charge stripping medium. A focusing apparatus is associated with the stripper tube to control a trajectory of the ions within the passageway of the stripper tube. The focusing apparatus can be two or more quadrupoles and include an electrostatic lens, a magnet, a solenoid, or a Einzel lens.

A plasma process chamber, divided into upper and lower sections by a grounded ion filter (GIF), is designed to optimize both ALE and ALD processes. In the ALE process, the substrate in the lower chamber is modified by chemically active neutrals, while ions are blocked by the GIF, enhancing process precision and ideality. During the ALD process, the plasma activation step utilizes radicals without ion interference, improving film conformity, particularly on high aspect ratio structures. This integrated chamber design ensures precise control and optimal conditions for both ALE and ALD, facilitating advanced semiconductor fabrication.

A power feedthrough assembly for a linear accelerator. The power feedthrough assembly may include an insulating housing, comprising a curved ceramic shell, and a conductive rod, coupled to deliver an RF voltage to a given acceleration stage of the linear accelerator, where the conductive rod extends through an aperture in the insulating housing. The power feedthrough assembly may also include a flange, coupled to mechanically connect the insulating housing to a wall of the linear accelerator. As such, the insulating housing may include a coupling structure that couples the insulating housing to the conductive rod and to the flange, wherein the coupling structure comprises at least one protrusion configured to couple with an external structure that is located in the flange or the conductive rod.

An ion implanter. The ion implanter may include an ion source to generate an ion beam, and a linear accelerator, downstream to the ion source. The linear accelerator may include a buncher system to receive the ion beam and output a bunched ion beam, and a plurality of acceleration stages, to accelerate the bunched ion beam. The buncher system may include at least one RF buncher, a controller to adjust at least one control parameter of the at least one RF buncher over a plurality of instances; and a beam monitor, disposed downstream of the at least one RF buncher, and arranged to perform a plurality of beam measurements of the bunched ion beam over the plurality of instances. As such, the controller may be further arranged to determine a focal length of the buncher based upon the plurality of beam measurements.

The present invention relates, inter alia, to a method for influencing a charge state of a sample, comprising directing a charged particle beam onto the sample for the purpose of analyzing and/or processing the sample, wherein the particles of the particle beam are accelerated onto the sample by a first acceleration voltage and result in charging of the sample, and directing the charged particle beam onto the sample for the purpose of influencing the charging of the sample, wherein the particles of the particle beam are accelerated onto the sample by a second, changed acceleration voltage amounting to at least 15% of the first acceleration voltage.