A system and method for controlling electrostatic clamping of multiple platens on a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on a spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The central hub provides the electrostatic clamping voltages to each of the plurality of platens. Further, the plurality of platens may also be capable of rotation about an axis orthogonal to the rotation axis of the central hub. The central hub controls the rotation of each of the platens. Power connections and communications are provided to the central hub via the spindle assembly.

The plasma is formed between electrodes to be energized from an electric power source, containing a partially ionized mass having a luminescence region including neutral atoms (NA), primary electrons (PE), secondary electrons (SE), and ions.

The method comprises the interspersed steps of: accelerating the primary electrons (PE) toward one of said electrodes (10) polarized by a short, positive, high voltage pulse, impacting primary electrons (PE) against said electrode (10) and ejecting secondary electrons (SE) from it; subsequently, accelerating the secondary electrons (SE) toward the luminescence region by polarization of said electrode (10) by a negative voltage with a lower voltage pulse colliding the secondary electrons with neutral atoms (NA) and producing positive ions (PI) and derived electrons (DE); the negative pulse must have a period of time sufficient to accelerate the positive ions (PI) of the luminescent region towards the electrodes 10, striking the surface of said electrodes; repeating the previous steps in order to obtain a steady state plasma with a desired degree of ionization. The control of the intensity and the period of the positive and negative pulses allow the control of the degree of ionization and the volume of the luminescent region of the plasma.

An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.

To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lens 105; primary electron acceleration means 104 that accelerates primary electrons 102; primary electron deceleration means 109 that decelerates the primary electrons and irradiates them to a sample 106; a secondary electron deflector 103 that deflects secondary electrons 110 from the sample to the outside of an optical axis of the primary electrons; a spectroscope 111 that disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope.

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens (7) configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector (5 and 6) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit (3 and 4) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.

To provide a charged particle beam device capable of preventing generation of geometric aberration by aligning axes of electrostatic lenses with high accuracy even when center holes of respective electrodes which constitute the electrostatic lens are not disposed coaxially. The charged particle beam device according to the invention includes an electrostatic lens disposed between an acceleration electrode and an objective lens, wherein at least one of the electrodes which constitutes the electrostatic lens is formed of a magnetic body, and two or more magnetic field generating elements are disposed along an outer periphery of the electrode.

An electron beam generator, a plasma processing apparatus, and a plasma processing method, the electron beam generator including a side insulator configured to surround the substrate support, the side insulator having an electron beam chamber therein; a first electrode embedded in the side insulator and adjacent to a first side wall of the electron beam chamber; a second electrode on a second side wall of the electron beam chamber; and a guide in an outlet of the electron beam chamber, the guide including slits through which electron beams generated in the electron beam chamber are transmittable into the process chamber.

An electron beam 3D printing machine, comprising a chamber for generating and accelerating an electron beam and an operating chamber in which a metal powder is melted, with the consequent production of a three-dimensional product. The chamber for generating and accelerating an electron beam houses means for generating an electron beam and means for accelerating the generated electron beam, while the operating chamber houses at least one platform for depositing the metal powder, metal powder handling means and electron beam deflection means. The accelerator means for the generated electron beam comprise a series of resonant cavities fed with an alternating signal.

A device for implanting particles in a substrate comprises a particle source and a particle accelerator for generating an ion beam of positively charged ions. The device also comprises a substrate holder and an energy filter, which is arranged between the particle accelerator and the substrate holder. The energy filter is a microstructured membrane with a predefined structural profile for setting a dopant depth profile and/or a defect depth profile produced in the substrate by the implantation. The device also comprises at least one passive braking element for the ion beam. The at least one passive braking element is arranged between the particle accelerator and the substrate holder and is spaced apart from the energy filter.

A scanning electron beam apparatus which two-dimensionally scans a sample by an electron beam, to achieve high resolution even with a photoexcited electron source. The electron beam apparatus includes a photocathode including a substrate having a refractive index of more than 1.7 and a photoemissive film, a focusing lens configured to focus an excitation light toward the photocathode, an extractor electrode disposed facing the photocathode and configured to accelerate an electron beam generated from the photoemissive film by focusing the excitation light by the focusing lens and emitting the excitation light through the substrate, and an electron optics including a deflector configured to two-dimensionally scan a sample by the electron beam accelerated by the extractor electrode. For a spherical aberration of the focusing lens, a root mean square of the spherical aberration on the photoemissive film is equal to or less than 1/14 of a wavelength of the excitation light.