An ion source having a thermionically-emitting cathode coupled to a plasma chamber and is exposed to a plasma chamber environment. A first power supply is coupled to a first filament associated with the thermionically-emitting cathode and is configured to selectively supply a first power to the first filament to heat the first filament to a first temperature and induce a thermionic emission from the thermionically-emitting cathode. A non-thermionically emitting cathode is coupled to the plasma chamber and exposed to the plasma chamber environment. A second power supply supplies a second power to a second filament associated with the non-thermionically emitting cathode and heats the second filament and the non-thermionically emitting cathode to a second temperature while not inducing thermionic emission from the non-thermionically emitting cathode, where condensation within the plasma chamber environment is minimized. A controller can control the first and second power supplies to provide constant power or emission.

An apparatus, referred to as a light bath, is disposed in a beamline ion implantation system and is used to photoionize particles in the ion beam into positively charged particles. Once positively charged, these particles can be manipulated by the various components in the beamline ion implantation system. In certain embodiments, a positively biased electrode is disposed downstream from the light bath to repel the formerly non-positively charged particles away from the workpiece. In certain embodiments, the light bath is disposed within an existing component in the beamline ion implantation system, such as a deceleration stage or a Vertical Electrostatic Energy Filter. The light source emits light at a wavelength sufficiently short so as to ionize the non-positively charged particles. In certain embodiments, the wavelength is less than 250 nm.

An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive H.sub.2 gas; a light source directing radiation into the ion source chamber to generate excited H.sub.2 molecules having an excited vibrational state from at least some of the H.sub.2 gas; a low energy electron source directing low energy electrons into the ion source chamber, wherein H.sup. ions are generated from at least some of the excited H.sub.2 molecules; and an extraction assembly arranged to extract the H.sup. ions from the ion source chamber.

A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field.

An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

An ion extraction optics including an extraction plate defining first, second, and third extraction apertures, the second extraction aperture being located between the first and third extraction apertures, first, second, and third beam blockers located adjacent the first, second, and third extraction apertures, respectively, wherein the first beam blocker and the first extraction aperture define first and second extraction slits, the second beam blocker and the second extraction aperture define third and fourth extraction slits, and the third beam blocker and the third extraction aperture define fifth and sixth extraction slits, wherein a height of the first extraction slit is greater than a height of at least one of the third extraction slit and the fourth extraction slit, and wherein a height of the sixth extraction slit is greater than the height of at least one of the third extraction slit and the fourth extraction slit.

A laser system for generating secondary radiation through interaction of a focused primary laser beam with a target material includes a laser beam source for providing a raw laser beam, and a beam guidance device for forming the focused primary laser beam from the raw laser beam. The focused primary laser beam is directed towards a target region in order to interact with the target material arranged in the target region. The beam guidance device includes a beam focusing device configured to form the primary laser beam by focusing a laser beam entering the beam focusing device, which corresponds to the raw laser beam. The beam focusing device includes at least two mirror elements spaced apart from one another. The beam focusing device has a numerical aperture between 0.001 and 0.01 provided that the primary laser beam propagates in a medium with a refractive index of less than 1.01.