Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

A broad beam plasma or ion source is provided, which includes an anode pole extending beyond the top surface of the cathode. A further aspect of a broad ion source includes magnets and magnetic shunts which create convex magnetic flux across and above the anode pole, which intercepts a significant portion of the magnetic flux. In another aspect, a broad beam ion source includes a magnetic surrounding cathode that prevents the magnetic flux from leaking out of the ion source. A further aspect provides a broad beam plasma source which is excited by combined DC and RF powers to create ions and reactive species to interact with specimen. Yet in a further aspect, a broad beam ion source operates simultaneously with another deposition source at the same internal pressure in a vacuum chamber for making high-quality thin films.

An ion source head includes a curved liner that is configured to more closely and accurately repel, direct, or deflect ion species generated within an ion source cavity of an ion source container of an ion source head towards an ion beam opening that extends through the ion source container of the ion source head. This prevents or reduces the ion species from becoming trapped in the ion source cavity instead of exiting the ion source cavity through the ion beam opening that extends through the ion source container of the ion source head. The curved liner may be received by a curved structure of the ion source container of the ion source head. The ion source head may be utilized within an implanter tool to refine or process a solid target with the ion beam generated by the ion source head with the curved liner.

Embodiments of charged particle beam systems, components, and methods for extracting charged particles from a gas are described. In a first aspect, A charged particle source includes a resonator. The resonator can include a dielectric substrate defining a first side and a second side, the second side opposite the first side. The resonator can include a first conductive layer disposed on the first side. The first conductive layer can be disposed in accordance with a pattern comprising a ring portion. The pattern can define a gap in the ring portion of the first conductive layer. The resonator can also include a second conductive layer disposed on the second side. The charged particle source can also include a source electrode. The source electrode can be disposed proximal to the first side. The source electrode can be offset from the dielectric substrate.

An ion source head includes a curved liner that is configured to more closely and accurately repel, direct, or deflect ion species generated within an ion source cavity of an ion source container of an ion source head towards an ion beam opening that extends through the ion source container of the ion source head. This prevents or reduces the ion species from becoming trapped in the ion source cavity instead of exiting the ion source cavity through the ion beam opening that extends through the ion source container of the ion source head. The curved liner may be received by a curved structure of the ion source container of the ion source head. The ion source head may be utilized within an implanter tool to refine or process a solid target with the ion beam generated by the ion source head with the curved liner.