A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

A source assembly for ion beam production is disclosed herein. An example source assembly may include a pair of plates separated by a distance, with each plate having an aperture, and the respective apertures aligned, and an ionization space defined at least by the distance and the respective apertures, where a ratio of the distance to an ionic mean free path of a gas in the ionization space is greater than one.

According to an embodiment of the present invention, an ion beam apparatus switches between an operation mode of performing irradiation with an ion beam most including H.sub.3.sup.+ ions and an operation mode of performing irradiation with an ion beam most including ions heavier than the H.sub.3.sup.+.

Processes may be performed with a plurality of FIB-SEM systems. A first process group includes recording an image with the electron beam column, depositing material with supply of a process gas, and performing ion beam etching. A second process group includes performing a sample exchange, exchanging a reservoir of a gas source for the process gas, and verifying an image that was recorded with the electron beam column. The processes of the second group are prioritized. The FIB-SEM systems are actuated to work through processes contained in process lists. If in a plurality of FIB-SEM systems processes of the second group are to be performed simultaneously, an instruction based on the prioritization is output to the user.

Processes may be performed with a plurality of FIB-SEM systems. A first process group includes recording an image with the electron beam column, depositing material with supply of a process gas, and performing ion beam etching. A second process group includes performing a sample exchange, exchanging a reservoir of a gas source for the process gas, and verifying an image that was recorded with the electron beam column. The processes of the second group are prioritized. The FIB-SEM systems are actuated to work through processes contained in process lists. If in a plurality of FIB-SEM systems processes of the second group are to be performed simultaneously, an instruction based on the prioritization is output to the user.

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.

An ion milling device which balances high processing speed and a wide processing region with smoothness of a processing surface. The ion milling device includes first to third ion guns that emit unfocused ion beams. An ion beam center of the third ion gun is included in a first plane defined by a normal to a surface of a sample and a mask end, and an ion beam center of the first ion gun and an ion beam center of the second ion gun are included in a second plane. The second plane is inclined toward the mask with respect to the first plane, and an angle formed by the first plane and the second plane is more than 0 degrees and 10 degrees or less. The processing surface of the sample is formed in a region where the emitted ion beams overlap on the surface of the sample.

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.

According to an embodiment of the present invention, an ion beam apparatus switches between an operation mode of performing irradiation with an ion beam most including H.sub.3.sup.+ ions and an operation mode of performing irradiation with an ion beam most including ions heavier than the H.sub.3.sup.+.

A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.