The present disclosure present and method and apparatus for controlling the direction of a Neutral Beam derived from a gas cluster ion beam.

A method for irradiating a planning target volume with charged particles includes delivering the charged particles to the planning target volume with a charged particle therapy system including a charged particle beam path and a gantry configured to rotate about the planning target volume and to direct the charged particle beam path; rotating the gantry, during an irradiation session, to a plurality of positions; during the rotation, irradiating the planning target volume with the charged particles at a first energy level at one or more of the plurality of positions.

A method for irradiating a planning target volume with charged particles includes delivering the charged particles to the planning target volume with a charged particle therapy system including a charged particle beam path and a gantry configured to rotate about the planning target volume and to direct the charged particle beam path; rotating the gantry, during an irradiation session, to a plurality of positions; during the rotation, irradiating the planning target volume with the charged particles at a first energy level at one or more of the plurality of positions.

A method for electron beam processing is described herein. A method includes disposing a substrate on a stage of a processing tool comprising a plurality of independently powered, independently controlled modular electron beam devices, concurrently directing a plurality of electron beams from the plurality of electron beam devices to the substrate to process different areas of the substrate concurrently, and, while directing the electron beams to the substrate, moving the substrate at a first constant velocity during a first scan pass and at a second constant velocity during a second scan pass, the first constant velocity being different from the second constant velocity.

A method for processing a wafer includes receiving the wafer on a flip assembly disposed in a processing chamber, the wafer being received in a first orientation parallel to a floor of the processing chamber, the flip assembly including a rotary bar coupled to a rotary drive. The method further includes transferring the wafer from the flip assembly to a wafer holder disposed in the processing chamber such that the wafer is disposed along a second orientation in the processing chamber, the second orientation being angled to the first orientation, and exposing the wafer in the second orientation to a flux of material.