A charged particle beam device is described, which includes: a beam source configured to generate a charged particle beam propagating along an optical axis (A); an aperture device with a plurality of apertures configured to create a plurality of beamlets from the charged particle beam; and a field curvature corrector. The field curvature corrector includes: a first multi-aperture electrode with a first plurality of openings having diameters that vary as a function of a distance from the optical axis (A); a second multi-aperture electrode with a second plurality of openings; and an adjustment device configured to adjust at least one of a first electrical potential (U1) of the first multi-aperture electrode and a second electrical potential (U2) of the second multi-aperture electrode. Further, a field curvature corrector and methods of operating a charged particle beam device are described.

An optical characterization system utilizing a micro-lens array (MLA) is provided. The system may include an electron source and a MLA including a micro-deflection array (MDA). The MDA may include an insulator substrate and a plurality of hexapole electrostatic deflectors disposed on the insulator substrate. The MDA may further include a plurality of voltage connecting lines configured to electrically couple the plurality of hexapole electrostatic deflectors to one or more voltage sources. The MDA may be configured to split a primary electron beam from the electron source into a plurality of primary electron beamlets. The system may be configured to focus the plurality of primary electron beamlets at a wafer plane.

A method for reducing throughput time in a sample image acquisition session in transmission electron microscopy comprises: providing an electron microscope comprising a sample component, a beam generator, an adjusting component, and a filtering component; securing a sample by using the sample component; generating an electron beam by using the beam generator; generating an image beam by directing the beam to the sample component; adjusting at least one of the beam and the image beam by using the adjusting component to obtain at least one modified image beam, wherein the adjusting is performed in such a way, that off-axial aberration of the modified image beam is minimized; and filtering the modified image beam via the filtering component to reduce resolution-deteriorating effect of chromatic aberration on the modified image beam resulting from the adjusting of the at least one of the beam and the image beam.

A charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets is described. The charged particle beam device includes a charged particle beam source to generate a primary charged particle beam; a multi-aperture plate having at least two openings to generate an array of charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen; an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotational symmetric charged particle lenses; and an objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen.

Disclosed herein is a charged-particle apparatus configured to inspect a sample with a charged-particle beam. The charged-particle apparatus comprises a detector assembly or an array of multipole elements. The charged-particle apparatus comprises an electronic device, a power source configured to output radiation, and a power converter configured to receive radiation from the power source, to convert the received radiation into electrical energy and to output the electrical energy to the electronic device. The power source is electrically isolated from the power converter.

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

A multi-beam charged particle inspection system and a method of operating a multi-beam charged particle inspection system for wafer inspection with high throughput and with high resolution and high reliability comprise a mechanism for reduction and compensation of a scanning induced aberration, such as a scanning distortion of a collective multi-beam raster scanner for beamlets propagating at an angle with respect to the optical axis of the multi-beam charged particle inspection system.

Disclosed are an apparatus and method for generating a plurality of substantially collimated charged particle beamlets. The apparatus includes a charged particle source for generating a diverging charged particle beam, a beam splitter for splitting the charged particle beam in an array of charged particle beamlets, a deflector array includes an array of deflectors including one deflector for each charged particle beamlet of said array of charged particle beamlets, wherein the deflector array is configured for substantially collimating the array of diverging charged particle beamlets. The apparatus further includes a beam manipulation device configured for generating electric and/or magnetic fields at least in an area between the charged particle source and the deflector array. The apparatus has a central axis, and the beam manipulation device is configured for generating electric and/or magnetic fields substantially parallel to the central axis and substantially perpendicular to the central axis.

A multi-electron beam image acquiring apparatus includes a stage configured to mount thereon a substrate, an illumination optical system configured to apply multiple primary electron beams to the substrate, a plurality of multipole lenses including at least two stages of multipole lenses, arranged at positions common to a trajectory of the multiple primary electron beams and a trajectory of multiple secondary electron beams which are emitted because the substrate is irradiated with the multiple primary electron beams and each configured to include at least four electrodes and at least four magnetic poles, and a multi-detector configured to detect the multiple secondary electron beams separated from the trajectory of the multiple primary electron beams, wherein one of the plurality of multipole lenses separates the multiple secondary electron beams from the trajectory of the multiple primary electron beams.

Systems for reducing the generation of thermal magnetic field noise in optical elements of microscope systems, are disclosed. Example microscopy optical elements having reduced Johnson noise generation according to the present disclosure comprises an inner core composed of an electrically isolating material, and an outer coating composed of an electrically conductive material. The product of the thickness of the outer coating and the electrical conductivity is less than 0.01?.sup.?1. The outer coating causes a reduction in Johnson noise generated by the optical element of greater than 2?, 3?, or an order of magnitude or greater. In a specific example embodiment, the optical element is a corrector system having reduced Johnson noise generation. Such a corrector system comprises an outer magnetic multipole, and an inner electrostatic multipole. The inner electrostatic multipole comprises an inner core composed of an electrically isolating material and an outer coating composed of an electrically conductive material.