Apparatus and method for outer wall and/or inner wall coating of hollow bodies made of an electrically nonconductive material in which the hollow body is inserted into a process chamber which is divided by the hollow body into an internal and external reaction space, wherein at least one process gas is introduced into one of the two reaction spaces under a process pressure, and a plasma is generated in the reaction space and fragments and/or reaction products formed in the plasma from the at least one process gas are deposited to form a layer on the side of the wall of the hollow body that faces the plasma, the plasma being influenced with regard to at least one operating parameter by a magnetic field that permeates the two reaction spaces.

A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

The transporting apparatus of the present invention comprises an end effector including a hand and a plurality of vacuum holes installed in the hand; and a carrier located on the hand and for supporting a consumable part, wherein the carrier comprises one side for supporting a consumable part, the other surface facing the hand of the end effector, and a plurality of support blocks installed on the other surface and corresponding to the plurality of vacuum holes, wherein an inner space communicating with the vacuum hole is installed in the plurality of support blocks, and the inner space is evacuated by negative pressure provided from the plurality of vacuum holes.

Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

A processing method includes: disposing a workpiece in a processing container of a processing apparatus, and maintaining an inside of the processing container in a vacuum state; providing a cluster nozzle in the processing container; supplying a cluster generating gas to the cluster nozzle and adiabatically expanding the cluster generating gas in the cluster nozzle, thereby generating gas clusters; generating plasma in the cluster nozzle to ionize the gas clusters and injecting the ionized gas clusters onto the workpiece; supplying a reactive gas to the cluster nozzle and exposing the reactive gas to the plasma such that the reactive gas becomes monomer ions or radicals; and supplying the monomer ions or radicals to the processing container, thereby exerting a chemical reaction on a substance present on a surface of the workpiece.

Systems and methods are provided for evacuating a chamber 101. The evacuation system comprises a cooler 320 coupled with the chamber and a controller 350. The controller is configured to determine whether a property of the cooler or the chamber satisfies one or more conditions. Based on the determination that the property satisfies the one or more conditions, the controller is configured to isolate the cooler from the chamber or control the temperature of the cooler to increase at one or more rates. The controller is further configured to control one or more pumps 330,340 to pump the chamber to a base pressure value.

The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking 5 part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.

According to one embodiment, a plasma processing apparatus includes a chamber, a plasma generator, a gas supplier supplying, a placement part, a depressurization part, and a supporting part. The supporting part includes a mounting part positioned below the placement part and provided with the placement part, and a beam extending from a side surface of the chamber toward a center axis of the chamber. One end of the beam is connected to a side surface of the mounting part. The beam includes a space connected to an outside space of the chamber. A following formula is satisfied, t1>t2, when a thickness of a side portion on the placement part side of side portions of the beam is taken as t1, a thickness of a side portion on an opposite side of the placement part side of the beam is taken as t2.

An object of the present disclosure is to provide a charged particle beam device that can suppress an influence to a device generated according to the preliminary exhaust. In order to achieve the object, suggested is a charged particle beam device including a vacuum sample chamber that maintains an atmosphere around a sample to be irradiated with a charged particle beam in a vacuum state; and a preliminary exhaust chamber to which a vacuum pump for vacuuming an atmosphere of the sample introduced into the vacuum sample chamber is connected, in which the vacuum sample chamber is a box-shaped body including a top plate, and a portion between the top plate and a side wall of the box-shaped body positioned below the top plate includes a portion in which the top plate and the side wall are not in contact with each other.