A film forming apparatus comprising: a processing container for accommodating a plurality of substrates, a substrate holder provided in the processing container and configured to hold the substrates such that the plurality of substrates are arranged along a circumferential direction; a rotating and revolving mechanism configured to rotate the plurality of substrates on the substrate holder and revolve the plurality of substrates on the substrate holder along the circumferential direction; and a sputtered particle emitting mechanism configured to emit sputtered particles to the plurality of substrates held by the substrate holder. Sputtering film formation is performed by emitting the sputtered particles from the sputtered particle emitting mechanism while rotating and revolving the plurality of substrates held by the substrate holder using the rotating and revolving mechanism.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

The present invention relates to a process and apparatus for the preparation of a bonded substrate. More particularly, the present invention relates to a PDMS bonding apparatus. More specifically, the present invention relates to a PDMS bonding apparatus which uses plasma to bond PDMS to a substrate.

The present invention discloses a PDMS bonding apparatus and process for using said apparatus, the apparatus comprising: a process chamber (100) forming a sealed processing space (S) for bonding of PDMS (polydimethylsiloxane); a first support (200) installed in the process chamber (100) and which supports the PDMS (1); a second support (300) installed in the process chamber (100) opposing the first support (200) and which supports a bonding object (2) which is bonded to the PDMS (1); a gas injection unit (400) which ejects process gas between the first support (200) and the second support (300), and; a plasma generator (500) which creates a plasma atmosphere within the process chamber (100).

Apparatuses and methods for automated grid validation are disclosed herein. An example method at least includes imaging a grid, the grid including a support portion and a plurality of posts extending from the support portion, wherein each post of the plurality of posts has a designated weld location, and determining, based on the image, whether the designated weld location of each post of the plurality of posts is valid.

The present disclosure relates to a substrate processing apparatus and method. The substrate processing apparatus and method can sequentially inject process gases onto substrates located in first and second spaces obtained by dividing the internal space of a chamber in the substrate processing apparatus, thereby forming thin films with uniform thicknesses on the substrates located in the first and second spaces.

The focused ion beam apparatus includes: an electron beam column; a focused ion beam column; a sample stage; a coordinate acquisition unit configured to acquire, when a plurality of irradiation positions to which the focused ion beam is to be applied are designated on a sample, plane coordinates of each of the irradiation positions; a movement amount calculation unit configured to calculate, based on the plane coordinates, a movement amount by which the sample stage is to be moved to a eucentric height so that the eucentric height matches an intersection position at which the electron beam and the focused ion beam match each other at each of the irradiation positions; and a sample stage movement control unit configured to move, based on the movement amount, the sample stage to the eucentric height at each of the irradiation positions.

A stage apparatus for an e-beam inspection apparatus comprising: an object table (3) comprising an supporting surface, the object table configured to support a substrate (190) on the supporting surface; a positioning device (180) configured to a position the object table; a position measurement system (5) comprising a position sensor (8-10) configured to measure a height position of the object table parallel to a first axis, the first axis being substantially perpendicular to the supporting surface, the position sensor comprising an interferometer measurement system having an interferometer sensor (9, 10, 22), wherein a measurement beam (11, 15) of the interferometer sensor is configured to irradiate a reflective surface (13, 17) of the object table in a measurement direction, the measurement direction having a first component parallel to the first axis and a second component parallel to a second axis, the second axis being substantially perpendicular to the first axis.

A substrate processing apparatus includes: a disk including a plurality of electrostatic chucks periodically disposed at a constant radius from a central axis; a disk support supporting the disk; a DC line electrically connected to the plurality of electrostatic chucks through the disk support; and a power supply configured to supply power to the DC line. The DC line includes: a first DC line penetrating through the disk support from the power supply; a power distribution unit configured to distribute the first DC line to connect the first DC line to each of the plurality of electrostatic chucks; and a plurality of second DC lines respectively connected to the plurality of electrostatic chucks in the power distribution unit.

An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

A deposition chamber includes a vacuum enclosure, an electrostatic chuck having a flat top surface located within a vacuum enclosure, a lift-and-rotation unit extending through or laterally surrounding the electrostatic chuck at a position that is laterally offset from a vertical axis passing through a geometrical center of the electrostatic chuck, a gas supply manifold configured to provide influx of gas into the vacuum enclosure, and a pumping port connected to the vacuum enclosure.