Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.

A particle beam apparatus and/or a light microscope is operated. A first temperature of an object may be changed, where the object may be arranged on an object receiving device rendered movable by a motor operated by a supply current. Changing the first temperature of the object may alter a second temperature of the object-receiving device from a first temperature value to a second temperature value. The supply current of the motor may be changed from a first current value to a second current value, where the supply current is designed to hold the object-receiving device in position, and a temperature of the object-receiving device may be changed from the second temperature value to a third temperature value on account of heat generated by the motor, which may be obtained by the second current value of the supply current and fed to the object receiving device.

A specimen holder includes a specimen shaft unit having a specimen and/or specimen mesh setting unit; an outer tubular unit capable of housing the specimen holder shaft unit; a cooling unit; and a thermoelectric element placed close to the cooling unit. In certain examples, the thermoelectric element may use at least one effect selected from the Peltier effect and the Thomson effect.

Introduced here is a plasma polymerization apparatus and process. Example embodiments include a vacuum chamber in a substantially symmetrical shape to a central axis. A rotation rack may be operable to rotate about the central axis of the vacuum chamber. Additionally, reactive species discharge mechanisms positioned around a perimeter of the vacuum chamber in a substantially symmetrical manner from the outer perimeter of the vacuum chamber may be configured to disperse reactive species into the vacuum chamber. The reactive species may form a polymeric multi-layer coating on surfaces of the one or more devices. Each layer may have a different composition of atoms to enhance the water resistance, corrosion resistance, and fiction resistance of the polymeric multi-layer coating.

Various approaches are provided for transferring samples within an inert gas environment to and from a beam system. In one example, a sample transfer capsule includes a container configured to store a sample during transport, wherein the container is adjustable between a closed configuration and an open configuration, an inert gas storage chamber coupled to the container and configured to store an inert gas, and a valve coupled to the inert gas storage chamber and the container and configured to selectively allow the inert gas to flow from the inert gas storage chamber to the container when the container is in the closed configuration. In this way, samples may be maintained in an inert gas environment during transport and while beam system vacuum chambers are vented, thereby reducing exposure of the samples and subsequently reducing the rate of a chemical reaction, such as oxidation or nitridation, of the samples.

Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

A charged particle beam apparatus for directing a charged particle beam to preselected locations of a sample surface is provided. The charged particle beam has a field of view of the sample surface. A charged-particle-optical arrangement is configured to direct a charged particle beam along a beam path towards the sample surface and to detect charged particles generated in the sample in response to the charged particle beam. A stage is configured to support and move the sample relative to the beam path. A controller is configured to control the charged particle beam apparatus so that the charged particle beam scans over a preselected location of the sample simultaneously with the stage moving the sample relative to the charged-particle-optical column along a route, the scan over the preselected location of the sample covering a part of an area of the field of view.

A tilting element of a manipulation stage uses a movement apparatus comprising a linear actuator attached to a fixed part and connected to a blade. The blade is attached at an end to a bottom side of a movable part to tilt the movable part relative to the fixed part. A tilt angle of the movable part relative to the fixed part is changed by extending and retracting the movable part of the linear actuator and thus winding and unwinding of the blade on the bottom side of the movable part.

A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.