Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

A gas feed device is operated, including displaying a functional parameter of the gas feed device. A gas feed device may carry out the operation, and a particle beam apparatus may include the gas feed device. A method may include predetermining and/or measuring a current temperature of a precursor reservoir of the gas feed device using a temperature measuring unit, where the precursor reservoir contains a precursor to be fed onto an object, loading a flow rate of the precursor through an outlet of the precursor reservoir from a database into a control unit, said flow rate being associated with the current temperature of the precursor reservoir, and (i) displaying the flow rate on the display unit and/or (ii) determining the functional parameter of the precursor reservoir depending on the flow rate using the control unit and informing a user of the gas feed device about the determined functional parameter.

A sample holder tip for use in transmission electron microscopy (TEM) or scanning electron microscopy (SEM) for performing in-situ experiments is described which facilitates in situ analysis of air-sensitive samples and allows physical manipulation of the sample. This includes, but is not limited to translation, rotation, electrical biasing, and heating/cooling for one or more individual cradles. The sample holder tip incorporates a compact design which eases sample loading and enables direct linkages between consecutive cradles, allowing a single tilt actuator to rotate each cradle around its respective eucentric position. Each of the connecting wires incorporates one or more bends or kinks which enable conductive access to the sample holder tip while also preserving the ability to also retract/extend the tip and tilt individual cradles with at least two degrees of freedom.

An optical pyrometer having a coaxial light guide delivers laser radiation through optics to heat a localized area on a sample, and simultaneously collects optical radiation from the sample to perform temperature measurement of the heated area. Inner and outer light guides can comprise the core and inner cladding, respectively, of a double-clad fiber (DCF), or can be formed using a combination of optical fibers in one or more coaxial bundles. Coaxial construction and shared optics facilitate alignment of the centers of the heated and observed areas on the sample. The heated area can be on the order of micrometers when using a single-mode optical fiber core as the inner light guide. The system can be configured to heat small samples within a vacuum system of charged-particle beam microscopes such as electron microscopes. A method for using the invention in a microscope is also provided.

A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.

An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.

Ion implantation systems and methods implant varying energies of an ion beam across a workpiece in a serial single-workpiece end station, where electrodes of an acceleration/deceleration stage, bend electrode and/or energy filter control a final energy or path of the ion beam to the workpiece. The bend electrode or an energy filter can form part of the acceleration/deceleration stage or can be positioned downstream. A scanning apparatus scans the ion beam and/or the workpiece, and a power source provides varied electrical bias signals to the electrodes. A controller selectively varies the electrical bias signals concurrent with the scanning of the ion beam and/or workpiece through the ion beam based on a desired ion beam energy at the workpiece. A waveform generator can provide the variation and synchronize the electrical bias signals supplied to the acceleration/deceleration stage, bend electrode and/or energy filter.

The present disclosure discloses a transmission electron microscope in-situ chip and a preparation method thereof. The transmission electron microscope in-situ chip includes a transmission electron microscope high-resolution in-situ gas phase heating chip, a transmission electron microscope high-resolution in-situ liquid phase heating chip and a transmission electron microscope in-situ electrothermal coupling chip. The transmission electron microscope high-resolution in-situ gas phase heating chip and the transmission electron microscope high-resolution in-situ liquid phase heating chip are respectively suitable for gas samples and liquid samples, and the transmission electron microscope in-situ electrothermal coupling chip realizes the multi-functional embodiment of electrothermal coupling. The three transmission electron microscope in-situ chips have the advantages of high resolution and low sample drift rate.

The present disclosure relates to a liquid chip for an electron microscope including a lower chip, an upper chip, and a waterway space part for supplying a liquid sample, and may attach a transmissive thin film layer made of a graphene material having an excellent bulging resistance property to a plurality of holes formed in a waterway space part to increase the thickness of a support not operating as a transmissive window to be larger than the conventional one, thereby supplying the liquid sample more stably and minimizing the loss of a spatial resolution and also suppressing the bulging phenomenon of the transmissive window. To this end, according to the present disclosure, the lower chip includes a lower substrate formed with a lower cavity; a lower support disposed on the upper surface of the lower substrate, and formed with a plurality of lower holes in the lower cavity region; a spacer located on both ends of the lower support of the lower hole; and a lower transmissive thin film layer attached on the lower support so as to cover the lower hole, the upper chip includes an upper substrate formed with an upper cavity; an upper support disposed on the upper surface of the upper substrate, and formed with a plurality of upper holes in the upper cavity region; and an upper transmissive thin film layer having a constant bulging resistance property attached on the upper support so as to cover the plurality of upper holes, the waterway space part is formed by laminating the upper support disposed on the upper surface of the upper substrate on the spacer of the lower chip, and the transmissive thin film layer is located inside the waterway space part.