A system includes a multi-beam particle microscope for imaging a 3D sample layer by layer, and a computer system with a multi-tier architecture is disclosed. The multi-tier architecture can allow for an optimized image processing by gradually reducing the amount of parallel processing speed when data exchange between different processing systems and/or of data originating from different detection channels takes place. A method images a 3D sample layer by layer. A computer program product includes a program code for carrying out the method.

The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

The objective of the present invention is to use brightness images acquired under different energy conditions to estimate the size of a defect in the depth direction in a simple manner. A charged-particle beam device according to the present invention determines the brightness ratio for each irradiation position on a brightness image while changing parameters varying the signal amount, estimates the position of the defect in the depth direction on the basis of the parameters at which the brightness ratio is at a minimum, and estimates the size of the defect in the depth direction on the basis of the magnitude of the brightness ratio (see FIG. 5).

The present disclosure provides a technique enabling accurate ascertaining of a charged state of a resist pattern resulting from irradiation of a charged particle beam. The present disclosure provides a charged particle beam system provided with: a charged particle device provided with a charged particle source, deflectors for causing a primary charged particle beam emitted from the charged particle source to be scanned over a sample, an energy discriminator for performing energy discrimination for secondary electrons emitted when the primary charged particle beam has reached the sample, and a detector for detecting secondary electrons which have passed the energy discriminator; and a computer system for generating a scan image on the basis of signal amounts detected by the detector, which fluctuate during scanning of primary charged particles by the deflectors, and storing the scan image into an image storage unit. The computer system generates a scan image for each frame at the time of frame integration of the scan image, calculates an amount of static build-up in each frame on the basis of the output of the scan image of each frame, and outputs information on the amount of static build-up.

The purpose of the present invention is to provide a scintillator for a charged particle beam device and a charged particle beam device which achieve both an increase in emission intensity and a reduction in afterglow intensity. This scintillator for a charged particle beam device is characterized by comprising a substrate (13), a buffer layer (14) formed on a surface of the substrate (13), a stack (12) of a light emitting layer (15) and a barrier layer (16) formed on a surface of the buffer layer (14), and a conductive layer (17) formed on a surface of the stack (12) and by being configured such that the light emitting layer (15) contains InGaN, the barrier layer (16) contains GaN, and the ratio b/a of the thickness b of the barrier layer (16) to the thickness a of the light emitting layer (15) is 11 to 25.

Methods for using a single electron microscope system for investigating a sample with TEM and STEM techniques include the steps of emitting electrons toward the sample, forming the electrons into a two beams, and then modifying the focal properties of at least one of the two beams such that they have different focal planes. Once the two beams have different focal planes, the first electron beam is focused such that it acts as a STEM beam that is focused at the sample, and the second electron beam is focused so that it acts as a TEM beam that is parallel beam when incident on the sample. Emissions resultant from the STEM beam and the TEM beam being incident on the sample can then be detected by a single detector or detector array and used to generate a TEM image and a STEM image.

According to various embodiments, an inspection device may include a chamber, a stage provided within the chamber, an electron emitter, a laser emitter, and a conductive probe. The stage may be configured to hold a sample. The electron emitter may be configured to emit an electron beam towards the stage, to generate a first electrical signal in the sample. The laser emitter may be configured to emit a laser beam towards the stage, to generate a second electrical signal in the sample. The conductive probe may be configured to receive from the conductive structure, at least one of the first electrical signal and the second electrical signal.

A method of measuring a critical dimension (CD) includes forming a plurality of patterns in a substrate, creating first to n-th images, where n is a natural number greater than 1, for first to n-th areas in the substrate, respectively, where the first to n-th areas do not overlap with each other, where each of the first to n-th areas comprising at least some of the plurality of patterns, creating a merged image for the first to n-th images, and measuring a CD for a measurement object from the plurality of patterns using the merged image. The merged image has a higher resolution than each of the first to n-th images.

The present invention relates to an image generation method for an objective for generating an image corresponding to a multi-frame image from image signals obtained by scanning a small number of frames are proposed. To achieve the above objective, there is proposed a method of performing two-dimensionally scanning on an object on a sample with a beam a plurality of times, generating a first image by integrating image signals obtained by a plurality of times of scanning at a first timing among the image signals generated based on the plurality of times of the two-dimensional scanning (S103), generating a second image based on the smaller number of times of scanning than the number of times of scanning at the first timing including scanning after the first timing (S105), training a learning device by using teacher data with the second image as an input and the first image as an output (S108), and inputting input image signals obtained by the smaller number of times of scanning than the number of times of scanning at the first timing to the trained learning device to output an estimated image.

A rapid and automatic virus imaging and analysis system includes (i) electron optical sub-systems (EOSs), each of which has a large field of view (FOV) and is capable of instant magnification switching for rapidly scanning a virus sample; (ii) sample management sub-systems (SMSs), each of which automatically loads virus samples into one of the EOSs for virus sample scanning and then unloads the virus samples from the EOS after the virus sample scanning is completed; (iii) virus detection and classification sub-systems (VDCSs), each of which automatically detects and classifies a virus based on images from the EOS virus sample scanning; and (iv) a cloud-based collaboration sub-system for analyzing the virus sample scanning images, storing images from the EOS virus sample scanning, and storing and analyzing machine data associated with the EOSs, the SMSs, and the VDCSs.