The present invention relates to a sensor for electron detection emitted from an object to be used with a charged particle beam column being operated at a certain column and wafer voltage. The sensor is configured and operable to at least reduce interaction of negative ions with the active area of the sensor while minimizing electrons energy loss. The sensor is also configured and operable to minimize both gradual degradation of a cathodoluminescence efficiency of the active area and dynamic change of cathodoluminescence generated during operation of the sensor and evolving throughout the scintillator's lifetime.

An image forming method includes: arranging a sample between a first main surface of an insulating thin film and a counter electrode, measuring an impedance value by inputting an AC potential signal to the counter electrode, scanning a physical beam while focusing and irradiating a conductive thin film given to cover a second main surface of the insulating thin film with the physical beam to lower an insulation property of the insulating thin film directly below an irradiation position, guiding the AC potential signal to the irradiation position, and forming an image from the impedance value corresponding to the irradiation position.

In an electron beam apparatus performing angular scanning that changes an incident angle of an electron beam incident at a predetermined incident position on a sample, when a correction coil is provided in a gap portion of a yoke (magnetic path) of an objective lens, spherical aberration can be corrected by following a deflection signal even if a deflection frequency increases. Therefore, a main control unit that controls an electron optical system sets predetermined phase change amounts a, b with respect to control of a scanning coil in control of the correction coil, and the predetermined phase change amounts a, b are made different depending on a plurality of scanning modes having different scanning speeds.

A method for chemical identification of a sample having nanostructures includes the steps of irradiating the surface at wavelengths for each of a first and a second of the nanostructures that are uniquely absorbed by each of the first nanostructure and the second nanostructure such that each is excited to modulate at a first or a second nanostructure frequency, respectively. The method continues with the steps of irradiating the surface with electron beams incident on each of the first and second nanostructure, wherein at least one of secondary electrons, backscattered electrons and transmitted electrons are modulated at the frequency corresponding to each of the first and second nanostructure frequencies. A chemical map of the sample at an atomic scale is then created. A microscope is provided to carry out the method.

Methods and systems for investigating a sample using a dual beam bifocal charged particle microscope, according to the present disclosure include emitting a plurality of charged particles toward the sample, forming the plurality of charged particles into a first charged particle beam and a second charged particle beam, and modifying the focal properties of at least one of the first charged particle beam and the second charged particle beam. The focal properties of at least one of the first charged particle beam and the second charged particle beam is modified such that the corresponding focal planes of the first charged particle beam and the second charged particle beam are different.

Methods for using a single electron microscope system for investigating a sample with TEM and STEM techniques include the steps of emitting electrons toward the sample, forming the electrons into a two beams, and then modifying the focal properties of at least one of the two beams such that they have different focal planes. Once the two beams have different focal planes, the first electron beam is focused such that it acts as a STEM beam that is focused at the sample, and the second electron beam is focused so that it acts as a TEM beam that is parallel beam when incident on the sample. Emissions resultant from the STEM beam and the TEM beam being incident on the sample can then be detected by a single detector or detector array and used to generate a TEM image and a STEM image.

Diffraction patterns of a sample at various tilt angles are acquired by irradiating a region of interest using a first charged particle beam. Sample images are acquired by irradiating the region of interest using a second charged particle beam. The first and second charged particle beams are formed by splitting charged particles generated by a charged particle source.

A measuring apparatus that irradiates a sample with a charged particle beam to observe the sample includes a particle source that outputs the charged particle beam, a lens that collects the charged particle beam, a detector that detects a signal of emitted electrons emitted from the sample which is irradiated with the charged particle beam, and a control device that controls the output of the charged particle beam and the detection of the signal of the emitted electrons in accordance with an observation condition, in which the control device sets, as the observation condition, a first parameter for controlling an irradiation cycle of the charged particle beam, a second parameter for controlling a pulse width of the pulsed charged particle beam, and a third parameter for controlling detection timing of the signal of the emitted electron within the irradiation time of the pulsed charged particle beam, and the third parameter is determined in accordance with a difference in intensity of signals of the plurality of the emitted electrons emitted from the irradiation position of the charged particle beam.

A charged particle beam device capable of easily discriminating the energy of secondary charged particles is realized. The charged particle beam device includes a charged particle source, a sample stage on which a sample is placed, an objective lens that irradiates the sample with a charged particle beam from the charged particle source, a deflector that deflects secondary charged particles released by irradiating the sample with the charged particle beam, a detector that detects the secondary charged particles deflected by the deflector, a sample voltage control unit that applies a positive voltage to the sample or the sample stage, and a deflection intensity control unit that controls the intensity with which the deflector deflects the secondary charged particles.

A semiconductor pattern detecting apparatus is provided. The semiconductor pattern detecting apparatus includes a stage configured to position a wafer formed with a semiconductor pattern, the stage extending in a first direction and a second direction perpendicular to the first direction, an electron emitter configured to irradiate first electrons on the semiconductor pattern, an electrode configured to generate an electric field to induce an electric potential on a surface of the semiconductor pattern, a detector configured to detect second electrons emitted from the semiconductor pattern, an imager configured to obtain a plurality of first images by using the second electrons detected by the detector, and at least one controller configured to apply a first voltage and a second voltage different from the first voltage to the electrode alternately and repeatedly and to generate a second image by combining the plurality of first images, wherein the imager is so configured that each of the plurality of first images are obtained when the first voltage is applied to the electrode.